TY - JOUR
T1 - Optical phonons in Znx Cd1-x Se thin films
AU - Avendaño-López, J.
AU - Castillo-Alvarado, F. L.
AU - Escamilla-Esquivel, A.
AU - Contreras-Puente, G.
AU - Ortiz-López, J.
AU - Zelaya-Angel, O.
PY - 1996/10
Y1 - 1996/10
N2 - A calculation is presented on the evolution of longitudinal and transverse optical phonons as a function of the concentration parameter x in the system Znx Cd1-x Se. The calculation is based in an isodisplacement model of the atoms which include interactions to first and second neighbors. The model is fitted to Raman measurements carried out on thin-film samples grown by Close Spaced Vapor Transport (CSVT). Comparison to the experimental data allows to conclude that the x-dependence of these optical modes corresponds to an intermediate-mode behavior.
AB - A calculation is presented on the evolution of longitudinal and transverse optical phonons as a function of the concentration parameter x in the system Znx Cd1-x Se. The calculation is based in an isodisplacement model of the atoms which include interactions to first and second neighbors. The model is fitted to Raman measurements carried out on thin-film samples grown by Close Spaced Vapor Transport (CSVT). Comparison to the experimental data allows to conclude that the x-dependence of these optical modes corresponds to an intermediate-mode behavior.
KW - A. Semiconductors
KW - A. Thin films
KW - D. Phonons
UR - http://www.scopus.com/inward/record.url?scp=0030271079&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(96)00356-0
DO - 10.1016/0038-1098(96)00356-0
M3 - Artículo
SN - 0038-1098
VL - 100
SP - 33
EP - 36
JO - Solid State Communications
JF - Solid State Communications
IS - 1
ER -