TY - JOUR
T1 - Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates
AU - Araiza, J. J.
AU - Aguilar-Frutis, M. A.
AU - Falcony, C.
PY - 2001/11
Y1 - 2001/11
N2 - Yttrium oxide thin films were deposited on Si(100) substrates using the rf-sputtering technique at low power density and low temperatures (up to 300°C). Previous to deposition, the substrates were plasma etched during different lengths of time. The characteristics of these films and the effect of surface etching on the substrate were studied by ellipsometry, x-ray diffraction at grazing angle, atomic force microscopy, and x-ray energy dispersive spectroscopy (EDS). The deposited films were polycrystalline, presenting cubic and/or monoclinic phases. The deposition rate, refractive index, surface roughness, and degree of crystallinity were strongly dependent on etching time of the substrate, especially for low deposition temperatures. The electrical characterization of the films incorporated in a metal-oxide-semiconductor structure showed a good dielectric constant value (up to 11), surface states densities as low as 6.7×1011 cm-2eV-1 at midgap and breakdown strength in the range of 1.16-4.84 MV/cm. EDS measurements on these films showed a higher oxygen content than expected for Y2O3 stoichiometry.
AB - Yttrium oxide thin films were deposited on Si(100) substrates using the rf-sputtering technique at low power density and low temperatures (up to 300°C). Previous to deposition, the substrates were plasma etched during different lengths of time. The characteristics of these films and the effect of surface etching on the substrate were studied by ellipsometry, x-ray diffraction at grazing angle, atomic force microscopy, and x-ray energy dispersive spectroscopy (EDS). The deposited films were polycrystalline, presenting cubic and/or monoclinic phases. The deposition rate, refractive index, surface roughness, and degree of crystallinity were strongly dependent on etching time of the substrate, especially for low deposition temperatures. The electrical characterization of the films incorporated in a metal-oxide-semiconductor structure showed a good dielectric constant value (up to 11), surface states densities as low as 6.7×1011 cm-2eV-1 at midgap and breakdown strength in the range of 1.16-4.84 MV/cm. EDS measurements on these films showed a higher oxygen content than expected for Y2O3 stoichiometry.
UR - http://www.scopus.com/inward/record.url?scp=26844438589&partnerID=8YFLogxK
U2 - 10.1116/1.1418399
DO - 10.1116/1.1418399
M3 - Artículo
AN - SCOPUS:26844438589
SN - 1071-1023
VL - 19
SP - 2205
EP - 2211
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 6
ER -