Optical and structural properties of SiC nanocrystals

M. Morales Rodriguez; A. Díaz Cano; T. V. Torchynska; J. Palacios Gomez; G. Gomez Gasga; G. Polupan; M. Mynbaeva

doi:10.1007/s10854-007-9379-1

Optical and structural properties of SiC nanocrystals

M. Morales Rodriguez, A. Díaz Cano, T. V. Torchynska, J. Palacios Gomez, G. Gomez Gasga, G. Polupan, M. Mynbaeva

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

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Resumen

This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Intensity enhancement for exciton-related PL bands (2.84, 3.04 and 3.24 eV ) is attributed to the exciton recombination rate increasing as result of electron-hole confinement realization in big size SiC NCs (6H-PSiC with inclusions of 15R- and 4H-PSiC) and/or quantum confinement exciton recombination in small-size 4H-PSiC NCs.

Idioma original	Inglés
Páginas (desde-hasta)	682-686
Número de páginas	5
Publicación	Journal of Materials Science: Materials in Electronics
Volumen	19
N.º	8-9
DOI	https://doi.org/10.1007/s10854-007-9379-1
Estado	Publicada - sep. 2008

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@article{45c59a12357a4950941520d033bedc0d,

title = "Optical and structural properties of SiC nanocrystals",

abstract = "This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Intensity enhancement for exciton-related PL bands (2.84, 3.04 and 3.24 eV ) is attributed to the exciton recombination rate increasing as result of electron-hole confinement realization in big size SiC NCs (6H-PSiC with inclusions of 15R- and 4H-PSiC) and/or quantum confinement exciton recombination in small-size 4H-PSiC NCs.",

author = "{Morales Rodriguez}, M. and {D{\'i}az Cano}, A. and Torchynska, {T. V.} and {Palacios Gomez}, J. and {Gomez Gasga}, G. and G. Polupan and M. Mynbaeva",

note = "Funding Information: Acknowledgement The work was supported by SIP-IPN, Mexico. Authors would like to thank Dr. S. Ostapenko from University of South Florida for low temperature (4.2 K) PL measurements.",

year = "2008",

month = sep,

doi = "10.1007/s10854-007-9379-1",

language = "Ingl{\'e}s",

volume = "19",

pages = "682--686",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "8-9",

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TY - JOUR

T1 - Optical and structural properties of SiC nanocrystals

AU - Morales Rodriguez, M.

AU - Díaz Cano, A.

AU - Torchynska, T. V.

AU - Palacios Gomez, J.

AU - Gomez Gasga, G.

AU - Polupan, G.

AU - Mynbaeva, M.

N1 - Funding Information: Acknowledgement The work was supported by SIP-IPN, Mexico. Authors would like to thank Dr. S. Ostapenko from University of South Florida for low temperature (4.2 K) PL measurements.

PY - 2008/9

Y1 - 2008/9

N2 - This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Intensity enhancement for exciton-related PL bands (2.84, 3.04 and 3.24 eV ) is attributed to the exciton recombination rate increasing as result of electron-hole confinement realization in big size SiC NCs (6H-PSiC with inclusions of 15R- and 4H-PSiC) and/or quantum confinement exciton recombination in small-size 4H-PSiC NCs.

AB - This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Intensity enhancement for exciton-related PL bands (2.84, 3.04 and 3.24 eV ) is attributed to the exciton recombination rate increasing as result of electron-hole confinement realization in big size SiC NCs (6H-PSiC with inclusions of 15R- and 4H-PSiC) and/or quantum confinement exciton recombination in small-size 4H-PSiC NCs.

UR - http://www.scopus.com/inward/record.url?scp=44149111870&partnerID=8YFLogxK

U2 - 10.1007/s10854-007-9379-1

DO - 10.1007/s10854-007-9379-1

M3 - Artículo

AN - SCOPUS:44149111870

SN - 0957-4522

VL - 19

SP - 682

EP - 686

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 8-9

ER -

Optical and structural properties of SiC nanocrystals

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