TY - GEN
T1 - Optical and structural properties of GaAs highly doped with carbon
AU - Diaz-Reyes, J.
AU - Flores-Mena, J. E.
AU - Gutierrez-Arias, J. M.
AU - Morincastillo, M. M.
AU - Azucena-Coyotecatl, H.
AU - Rodriguez-Fragoso, P.
PY - 2010
Y1 - 2010
N2 - This work presents the characterization of p-type GaAs layers highly doped with carbon grown in a metallic-arsenic-based-MOCVD system. The gallium precursor was the compound trimethylgallium (TMG) and elemental arsenic as precursor of arsenic, respectively. The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements, Hall effect and High resolution X-ray diffraction (HRXRD). In order to dope with carbon in the range of 1016 to 1020 cm-3, it was necessary to modify the activity of hydrogen in the growth atmosphere with the control of a mixture H2+N2, which was used like carrying gas. The PL and Raman scattering responses of the samples are strongly dependence of the growth temperature, which were investigated based on the hole concentration. Device quality GaAs layers have been grown in a broad range of growth temperatures.
AB - This work presents the characterization of p-type GaAs layers highly doped with carbon grown in a metallic-arsenic-based-MOCVD system. The gallium precursor was the compound trimethylgallium (TMG) and elemental arsenic as precursor of arsenic, respectively. The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements, Hall effect and High resolution X-ray diffraction (HRXRD). In order to dope with carbon in the range of 1016 to 1020 cm-3, it was necessary to modify the activity of hydrogen in the growth atmosphere with the control of a mixture H2+N2, which was used like carrying gas. The PL and Raman scattering responses of the samples are strongly dependence of the growth temperature, which were investigated based on the hole concentration. Device quality GaAs layers have been grown in a broad range of growth temperatures.
KW - Gallium arsenide
KW - MOCVD
KW - Photoluminescence
KW - Raman scattering
KW - Semiconductor compounds III-V
UR - http://www.scopus.com/inward/record.url?scp=79960129177&partnerID=8YFLogxK
M3 - Contribución a la conferencia
AN - SCOPUS:79960129177
SN - 9789604742486
T3 - Advances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
SP - 94
EP - 98
BT - Advances in Sensors, Signals and Materials - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
T2 - 3rd WSEAS International Conference on Sensors and Signals, SENSIG'10, 3rd WSEAS International Conference on Materials Science, MATERIALS'10
Y2 - 3 November 2010 through 5 November 2010
ER -