Optical and structural characterization of ZnO films deposited by chemical bath and activated by means of microwaves

Zinc oxide (ZnO) is a direct, wide band gap semiconductor material having many promising properties for UV/blue optoelectronics, transparent electronics, spintr spintronic devices and onic sensor applications. The ZnO is synthesized by the technique of Chemical Bath Deposition by microwaves heating (MW-CBD). The urea concentration in the solution is varied, maintaining constant t the zinc nitrate in ratio 1:1 ... 1:10. The physi physical properties of ZnO thin films were examined by X-ray diffraction (XRD), SEM SEM-EDS, and Raman scattering, which are convenient tools that can provide us with plenty of information about crystal structure and elementary excitons. By X X-rays one obtains that it has hexagonal polycrystalline wurtzite type structure. The IR absorption line at 3577 cm cm^-1 detected at 300 K in bath chemical ZnO is assigned an O-H bond primarily aligned with the c c-axis of the crystal and bonding between Zn Zn-O (473cm 473cm^-1, 532 cm , cm^-1). The Raman spectra show the first order experimental Raman spectra of ZnO excited by 514.5 nm laser line. The first order Raman modes A_1T, E_1T, E ₂(H), A_1Land E_1L are identified as the peaks sited at 385, 426, 437, 572 and 584 cm^-1.