OH-related emitting centers in interface layer of porous silicon

T. V. Torchynska; M. K. Sheinkman; N. E. Korsunskaya; L. Yu Khomenkovan; B. M. Bulakh; B. R. Dzhumaev; A. Many; Y. Goldstein; E. Savir

doi:10.1016/S0921-4526(99)00563-3

OH-related emitting centers in interface layer of porous silicon

T. V. Torchynska, M. K. Sheinkman, N. E. Korsunskaya, L. Yu Khomenkovan, B. M. Bulakh, B. R. Dzhumaev, A. Many, Y. Goldstein, E. Savir

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

32 Citas (Scopus)

Resumen

Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.

Idioma original	Inglés
Páginas (desde-hasta)	955-958
Número de páginas	4
Publicación	Physica B: Condensed Matter
Volumen	273-274
DOI	https://doi.org/10.1016/S0921-4526(99)00563-3
Estado	Publicada - 15 dic. 1999
Evento	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duración: 26 jul. 1999 → 30 jul. 1999

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title = "OH-related emitting centers in interface layer of porous silicon",

abstract = "Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.",

author = "Torchynska, {T. V.} and Sheinkman, {M. K.} and Korsunskaya, {N. E.} and Khomenkovan, {L. Yu} and Bulakh, {B. M.} and Dzhumaev, {B. R.} and A. Many and Y. Goldstein and E. Savir",

note = "Funding Information: This work was supported by the Ministry of Science and Technology of Ukraine and the Ministry of Science of Israel (grant 2M/1406) and CONACYT Mexico.; Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

year = "1999",

month = dec,

day = "15",

doi = "10.1016/S0921-4526(99)00563-3",

language = "Ingl{\'e}s",

volume = "273-274",

pages = "955--958",

journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - OH-related emitting centers in interface layer of porous silicon

AU - Torchynska, T. V.

AU - Sheinkman, M. K.

AU - Korsunskaya, N. E.

AU - Khomenkovan, L. Yu

AU - Bulakh, B. M.

AU - Dzhumaev, B. R.

AU - Many, A.

AU - Goldstein, Y.

AU - Savir, E.

N1 - Funding Information: This work was supported by the Ministry of Science and Technology of Ukraine and the Ministry of Science of Israel (grant 2M/1406) and CONACYT Mexico.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.

AB - Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.

UR - http://www.scopus.com/inward/record.url?scp=0033350971&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00563-3

DO - 10.1016/S0921-4526(99)00563-3

M3 - Artículo de la conferencia

SN - 0921-4526

VL - 273-274

SP - 955

EP - 958

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

OH-related emitting centers in interface layer of porous silicon

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