Nature of photoluminescence excitation bands in porous silicon

T. V. Torchinskaya; N. E. Korsunskaya; M. K. Sheinkman; L. Yu Khomenkova; B. M. Bulakh; B. R. Dzhumaev; A. Many; Y. Goldstein; E. Savir

Nature of photoluminescence excitation bands in porous silicon

T. V. Torchinskaya, N. E. Korsunskaya, M. K. Sheinkman, L. Yu Khomenkova, B. M. Bulakh, B. R. Dzhumaev, A. Many, Y. Goldstein, E. Savir

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

Resumen

Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide.

Idioma original	Inglés
Páginas	109-112
Número de páginas	4
Estado	Publicada - 1999
Publicado de forma externa	Sí
Evento	Proceedings of the 1999 International Semiconductor Conference (CAS '99) - Sinaia, Romania Duración: 5 oct. 1999 → 9 oct. 1999

Conferencia

Conferencia	Proceedings of the 1999 International Semiconductor Conference (CAS '99)
Ciudad	Sinaia, Romania
Período	5/10/99 → 9/10/99

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@conference{0e9edc0dcdab443188bd62b7671a0024,

title = "Nature of photoluminescence excitation bands in porous silicon",

abstract = "Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide.",

author = "Torchinskaya, {T. V.} and Korsunskaya, {N. E.} and Sheinkman, {M. K.} and Khomenkova, {L. Yu} and Bulakh, {B. M.} and Dzhumaev, {B. R.} and A. Many and Y. Goldstein and E. Savir",

year = "1999",

language = "Ingl{\'e}s",

pages = "109--112",

note = "Proceedings of the 1999 International Semiconductor Conference (CAS '99) ; Conference date: 05-10-1999 Through 09-10-1999",

}

TY - CONF

T1 - Nature of photoluminescence excitation bands in porous silicon

AU - Torchinskaya, T. V.

AU - Korsunskaya, N. E.

AU - Sheinkman, M. K.

AU - Khomenkova, L. Yu

AU - Bulakh, B. M.

AU - Dzhumaev, B. R.

AU - Many, A.

AU - Goldstein, Y.

AU - Savir, E.

PY - 1999

Y1 - 1999

N2 - Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide.

AB - Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide.

UR - http://www.scopus.com/inward/record.url?scp=0033324419&partnerID=8YFLogxK

M3 - Artículo

SP - 109

EP - 112

T2 - Proceedings of the 1999 International Semiconductor Conference (CAS '99)

Y2 - 5 October 1999 through 9 October 1999

ER -

Nature of photoluminescence excitation bands in porous silicon

Resumen

Conferencia

Otros archivos y enlaces

Huella

Citar esto