Microwave performances of silicon heterostructure-FETs

F. Aniel; M. Enciso; S. Richard; L. Giguerre; N. Zerounian; P. Crozat; R. Adde; T. Hackbarth; J. H. Herzog; U. König

doi:10.1016/j.apsusc.2003.08.080

Microwave performances of silicon heterostructure-FETs

F. Aniel, M. Enciso, S. Richard, L. Giguerre, N. Zerounian, P. Crozat, R. Adde, T. Hackbarth, J. H. Herzog, U. König

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

3 Citas (Scopus)

Resumen

We present the state of the art of microwave performances of silicon heterostructures FETs (hetero-FETs). Recent advances are illustrated on using DaimlerChrysler (DC) technologies. f _MAX as high as 188 and 135GHz with minimum noise figure, NF _min as low as 0.3 and 0.5 dB at 2.5 GHz are reported, respectively, for n- and p-MODFET with gatelength from 100 to 130 nm. Experimental data and physical simulations of optimized structures show that f _MAX of 70 nm gatelength n-MODFET could reach 360 GHz.

Idioma original	Inglés
Páginas (desde-hasta)	370-376
Número de páginas	7
Publicación	Applied Surface Science
Volumen	224
N.º	1-4
DOI	https://doi.org/10.1016/j.apsusc.2003.08.080
Estado	Publicada - 15 mar. 2004
Publicado de forma externa	Sí

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title = "Microwave performances of silicon heterostructure-FETs",

abstract = " We present the state of the art of microwave performances of silicon heterostructures FETs (hetero-FETs). Recent advances are illustrated on using DaimlerChrysler (DC) technologies. f MAX as high as 188 and 135GHz with minimum noise figure, NF min as low as 0.3 and 0.5 dB at 2.5 GHz are reported, respectively, for n- and p-MODFET with gatelength from 100 to 130 nm. Experimental data and physical simulations of optimized structures show that f MAX of 70 nm gatelength n-MODFET could reach 360 GHz.",

keywords = "Low noise, Microwave devices, Strained silicon quantum well",

author = "F. Aniel and M. Enciso and S. Richard and L. Giguerre and N. Zerounian and P. Crozat and R. Adde and T. Hackbarth and Herzog, {J. H.} and U. K{\"o}nig",

note = "Funding Information: The authors acknowledge financial support under EC-IST-1999-10444 SIGMUND, BmBF-IK007A-ALCANT-SATCOM, and IPN and CONACyT-Mexico.",

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T1 - Microwave performances of silicon heterostructure-FETs

AU - Aniel, F.

AU - Enciso, M.

AU - Richard, S.

AU - Giguerre, L.

AU - Zerounian, N.

AU - Crozat, P.

AU - Adde, R.

AU - Hackbarth, T.

AU - Herzog, J. H.

AU - König, U.

N1 - Funding Information: The authors acknowledge financial support under EC-IST-1999-10444 SIGMUND, BmBF-IK007A-ALCANT-SATCOM, and IPN and CONACyT-Mexico.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - We present the state of the art of microwave performances of silicon heterostructures FETs (hetero-FETs). Recent advances are illustrated on using DaimlerChrysler (DC) technologies. f MAX as high as 188 and 135GHz with minimum noise figure, NF min as low as 0.3 and 0.5 dB at 2.5 GHz are reported, respectively, for n- and p-MODFET with gatelength from 100 to 130 nm. Experimental data and physical simulations of optimized structures show that f MAX of 70 nm gatelength n-MODFET could reach 360 GHz.

AB - We present the state of the art of microwave performances of silicon heterostructures FETs (hetero-FETs). Recent advances are illustrated on using DaimlerChrysler (DC) technologies. f MAX as high as 188 and 135GHz with minimum noise figure, NF min as low as 0.3 and 0.5 dB at 2.5 GHz are reported, respectively, for n- and p-MODFET with gatelength from 100 to 130 nm. Experimental data and physical simulations of optimized structures show that f MAX of 70 nm gatelength n-MODFET could reach 360 GHz.

KW - Low noise

KW - Microwave devices

KW - Strained silicon quantum well

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U2 - 10.1016/j.apsusc.2003.08.080

DO - 10.1016/j.apsusc.2003.08.080

M3 - Artículo

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SN - 0169-4332

VL - 224

SP - 370

EP - 376

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Microwave performances of silicon heterostructure-FETs

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