Mechanisms of III-V light-emitting diode bulk degradation

Tatiana V. Torchinskaya

Mechanisms of III-V light-emitting diode bulk degradation

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

Resumen

The mechanisms of bulk degradation of GaP:N, GaP:N,Zn-O, AlGaAs:Zn, AlGaAs:Ge and GaAs:Si light emitting diodes (LED's) were investigated both theoretically and experimentally. Four principal types of defect transformation reactions were determined to take place in these LEDs. The types and mechanisms of the elementary degradation processes are discussed.

Idioma original	Inglés
Páginas (desde-hasta)	200-202
Número de páginas	3
Publicación	Proceedings of SPIE - The International Society for Optical Engineering
Volumen	3316
N.º	1
Estado	Publicada - 1998
Publicado de forma externa	Sí
Evento	Proceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2) - Delhi, India Duración: 16 dic. 1997 → 20 dic. 1997

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{2bd49bbed83d4ab19cf7ce7fb4631b07,

title = "Mechanisms of III-V light-emitting diode bulk degradation",

abstract = "The mechanisms of bulk degradation of GaP:N, GaP:N,Zn-O, AlGaAs:Zn, AlGaAs:Ge and GaAs:Si light emitting diodes (LED's) were investigated both theoretically and experimentally. Four principal types of defect transformation reactions were determined to take place in these LEDs. The types and mechanisms of the elementary degradation processes are discussed.",

author = "Torchinskaya, {Tatiana V.}",

year = "1998",

language = "Ingl{\'e}s",

volume = "3316",

pages = "200--202",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

number = "1",

note = "Proceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2) ; Conference date: 16-12-1997 Through 20-12-1997",

}

TY - JOUR

T1 - Mechanisms of III-V light-emitting diode bulk degradation

AU - Torchinskaya, Tatiana V.

PY - 1998

Y1 - 1998

N2 - The mechanisms of bulk degradation of GaP:N, GaP:N,Zn-O, AlGaAs:Zn, AlGaAs:Ge and GaAs:Si light emitting diodes (LED's) were investigated both theoretically and experimentally. Four principal types of defect transformation reactions were determined to take place in these LEDs. The types and mechanisms of the elementary degradation processes are discussed.

AB - The mechanisms of bulk degradation of GaP:N, GaP:N,Zn-O, AlGaAs:Zn, AlGaAs:Ge and GaAs:Si light emitting diodes (LED's) were investigated both theoretically and experimentally. Four principal types of defect transformation reactions were determined to take place in these LEDs. The types and mechanisms of the elementary degradation processes are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0032296091&partnerID=8YFLogxK

M3 - Artículo de la conferencia

AN - SCOPUS:0032296091

SN - 0277-786X

VL - 3316

SP - 200

EP - 202

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - 1

T2 - Proceedings of the 1997 9th International Workshop on the Physics of Semiconductor Devices, IWPSD. Part 1 (of 2)

Y2 - 16 December 1997 through 20 December 1997

ER -

Mechanisms of III-V light-emitting diode bulk degradation

Resumen

Otros archivos y enlaces

Huella

Citar esto