TY - JOUR
T1 - Mechanism of injection-enhanced defect transformation in LPE GaAs structures
AU - Torchynska, Tetyana V.
AU - Polupan, Georgiy P.
AU - Kooshnirenko, Vladimir I.
AU - Scherbina, Evgeniy
N1 - Funding Information:
This work was partially supported by Ministry of Sciences of Ukraine and CONACYT Mexico.
PY - 1999/12/15
Y1 - 1999/12/15
N2 - It has been shown that the electroluminescence variation in LEDs based on LPE GaAs: Si structures is a complex phenomenon, which is due to recombination-enhanced decomposition of the original complex defects with intrinsic defect appearance, subsequent diffusion of intrinsic defects and microprecipitate creation on final stage. A theoretical model of these processes has been created. The numerical calculation results of the kinetics of GaAs:Si LED EL variation and intrinsic defect transformation have been presented, which enabled us to estimate the recombination-enhanced efficiency of complex defect decomposition and the diffusion coefficient for intrinsic lattice defects, apparently interstitial Ga atoms, as well as to prove that the processes of this intrinsic defect diffusion in GaAs layer is not recombination-enhanced one.
AB - It has been shown that the electroluminescence variation in LEDs based on LPE GaAs: Si structures is a complex phenomenon, which is due to recombination-enhanced decomposition of the original complex defects with intrinsic defect appearance, subsequent diffusion of intrinsic defects and microprecipitate creation on final stage. A theoretical model of these processes has been created. The numerical calculation results of the kinetics of GaAs:Si LED EL variation and intrinsic defect transformation have been presented, which enabled us to estimate the recombination-enhanced efficiency of complex defect decomposition and the diffusion coefficient for intrinsic lattice defects, apparently interstitial Ga atoms, as well as to prove that the processes of this intrinsic defect diffusion in GaAs layer is not recombination-enhanced one.
UR - http://www.scopus.com/inward/record.url?scp=0033354061&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(99)00633-X
DO - 10.1016/S0921-4526(99)00633-X
M3 - Artículo de la conferencia
SN - 0921-4526
VL - 273-274
SP - 1037
EP - 1040
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)
Y2 - 26 July 1999 through 30 July 1999
ER -