Mechanically induced long period fiber gratings in Er3+ fiber for structural health monitoring

M. G. Pulido-Navarro, J. A. Alvarez-Chavez, D. E. Ceballos-Herrera, P. J. Escamilla-Ambrosio

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

This work presents preliminary results on wavelength sensitivity due to mechanically induced long period fiber grating (LPFG) on both standard single-mode and Er-doped fibers. The work presents and compares results for both types of fibers under different torsion conditions. In order to apply the torsion one of the fiber ends is fixed while torsion is applied on the other end. A LPFG whose period is 503μm is used to press on the fiber after the torsion, this will allow for micro curvatures to be formed on the fiber, which will in turn generate a periodical index perturbation on it. Here, it was noted that the rejection band shifts to shorter wavelengths for Er-doped fibers. It was detected that for torsion of 6 turns applied to 10cm doped fiber the wavelength peaks can shift up to 25nm, which is longer than similar results reported on standard fibers. Therefore, by using Er-doped fibers this technique will give more sensitive and accurate results on the real conditions of the structure under study. These results can be employed for sensing applications, especially for small to medium size structures, being these structures mechanical, civil or aeronautical. Theoretical calculations and simulations are employed for experimental results validation.

Idioma originalInglés
Título de la publicación alojadaInfrared Sensors, Devices, and Applications III
DOI
EstadoPublicada - 2013
EventoInfrared Sensors, Devices, and Applications III - San Diego, CA, Estados Unidos
Duración: 26 ago. 201328 ago. 2013

Serie de la publicación

NombreProceedings of SPIE - The International Society for Optical Engineering
Volumen8868
ISSN (versión impresa)0277-786X
ISSN (versión digital)1996-756X

Conferencia

ConferenciaInfrared Sensors, Devices, and Applications III
País/TerritorioEstados Unidos
CiudadSan Diego, CA
Período26/08/1328/08/13

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