TY - GEN
T1 - Lumped model-based analysis of hBN RF switches
AU - Jordan-Garcia, Omar
AU - Ramirez-Garcia, Eloy
AU - Jimenez, David
AU - Pacheco-Sanchez, Anibal
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF two-dimensional switches fabricated with hexagonal boron nitride (hBN) are described here by a lumped equivalent circuit model. Straight-forward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism.
AB - The intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF two-dimensional switches fabricated with hexagonal boron nitride (hBN) are described here by a lumped equivalent circuit model. Straight-forward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism.
KW - 2D
KW - RF switch
KW - hBN
KW - insertion loss
KW - isolation
KW - resistive switching
UR - http://www.scopus.com/inward/record.url?scp=85141361474&partnerID=8YFLogxK
U2 - 10.1109/LAEDC54796.2022.9907772
DO - 10.1109/LAEDC54796.2022.9907772
M3 - Contribución a la conferencia
AN - SCOPUS:85141361474
T3 - 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
BT - 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
Y2 - 4 July 2022 through 6 July 2022
ER -