TY - GEN
T1 - Low threshold current density GaInAsSb/GaAlAsSb DH lasers emitting at 2.2 μm
AU - Herrera-Perez, J. L.
AU - Morosini, M. B.Z.
AU - da Silveira, A. C.F.
AU - Patel, N. B.
PY - 1991
Y1 - 1991
N2 - GaInAsSb/GaAlAsSb double-heterojunction injection lasers emitting at 2.2 μm with 27% Al in the confining layers have been prepared by liquid-phase-epitaxy, with very smooth hetero-interfaces. The best result of the threshold current density Jth = 2 KA/cm2 at room temperature was a factor three lower than reported earlier for similar lasers.
AB - GaInAsSb/GaAlAsSb double-heterojunction injection lasers emitting at 2.2 μm with 27% Al in the confining layers have been prepared by liquid-phase-epitaxy, with very smooth hetero-interfaces. The best result of the threshold current density Jth = 2 KA/cm2 at room temperature was a factor three lower than reported earlier for similar lasers.
UR - http://www.scopus.com/inward/record.url?scp=0026367582&partnerID=8YFLogxK
M3 - Contribución a la conferencia
AN - SCOPUS:0026367582
SN - 0854984100
T3 - Institute of Physics Conference Series
SP - 483
EP - 486
BT - Institute of Physics Conference Series
PB - Publ by IOP Publishing Ltd
T2 - Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
Y2 - 9 September 1991 through 12 September 1991
ER -