Resumen
In this work we present a new technique for the growth of films, CSVT-FE with Cd overpressure; and the influence of Cd overpressure on the structural and electrical properties in CdTe and CdTe:In films. The Cd overpressure did not have influence over the properties of CdTe films. The Cd overpressure decreases on three orders of magnitude the resistivity on the samples of CdTe:In, for low In concentrations.
Idioma original | Alemán |
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Páginas (desde-hasta) | 174-176 |
Número de páginas | 3 |
Publicación | Revista Mexicana de Fisica |
Volumen | 45 |
N.º | 2 |
Estado | Publicada - abr. 1999 |