TY - JOUR
T1 - Influence of substrate conductivity on layer thickness in LPE GaAs
AU - Olvera-Hernández, J.
AU - De Jesús, P.
AU - De Anda, F.
AU - Rojas-López, M.
N1 - Funding Information:
The authors would like to thank the financial support by VIEP-BUAP, México.
PY - 2004/8/1
Y1 - 2004/8/1
N2 - Differences have been found on the growth rate of epitaxial layers grown simultaneously on semi-insulating and P and N type (100) GaAs substrates from the same Ga-As liquid solution. The layers were grown by LPE at 786°C using an initial supercooling of 15°C and a cooling rate of 0.5°C/min. The thickness of the grown layers was measured, under an optical microscope, in cleaved cross-sections etched in a FeCl3-HCl solution. To fit the thickness-growth time data to the theoretical expression used for diffusion-limited growth it is necessary to use different initial supercoolings for the layers grown in each substrate, in spite that those layers were grown at the same time, from the same solution and therefore under exactly the same conditions.
AB - Differences have been found on the growth rate of epitaxial layers grown simultaneously on semi-insulating and P and N type (100) GaAs substrates from the same Ga-As liquid solution. The layers were grown by LPE at 786°C using an initial supercooling of 15°C and a cooling rate of 0.5°C/min. The thickness of the grown layers was measured, under an optical microscope, in cleaved cross-sections etched in a FeCl3-HCl solution. To fit the thickness-growth time data to the theoretical expression used for diffusion-limited growth it is necessary to use different initial supercoolings for the layers grown in each substrate, in spite that those layers were grown at the same time, from the same solution and therefore under exactly the same conditions.
KW - A1. Growth models
KW - A3. Liquid phase epitaxy
KW - B1. GaAs
UR - http://www.scopus.com/inward/record.url?scp=3142699273&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.04.057
DO - 10.1016/j.jcrysgro.2004.04.057
M3 - Artículo de la conferencia
AN - SCOPUS:3142699273
SN - 0022-0248
VL - 268
SP - 375
EP - 377
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4 SPEC. ISS.
T2 - ICMAT 2003, Symposium H, Compound Semiconductors in Electronic
Y2 - 7 December 2003 through 12 December 2004
ER -