TY - JOUR
T1 - Influence of Germanium Content on the Properties of Cu2Zn(SnGe)Se4 Thin Films Deposited by Sequential Thermal Evaporation Technique Studied by Photoacoustic Technique
AU - Vigil-Galán, Osvaldo
AU - González-Castillo, Jesús Roberto
AU - Macias, Marcos
AU - Cruz-Orea, Alfredo
AU - Pulgarín-Agudelo, Fabián Andrés
AU - Rodríguez, Eugenio
N1 - Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/9/1
Y1 - 2019/9/1
N2 - Herein, the influence of the germanium (Ge) content on the surface recombination velocity, nonradiative carrier recombination time, and thermal diffusivity of Cu2Zn(SnGe)Se4 compound from photoacoustic (PA) measurements is presented. The compounds are synthesized by a sequential thermal evaporation technique and thermal annealing. The order of the metallic stacks deposited on the coated molybdenum glass substrates is Cu/Sn/Cu/Zn/Ge. The thicknesses of Cu(3 nm)/Sn(248 nm)/Cu(112 nm)/Zn (174 nm) are kept constant, and only the thickness of the Ge layer is varied between 10 and 30 nm. The incorporation of germanium shows changes in the aforementioned parameters in dependence of the Ge content. Atomic force microscopy (AFM) as complementary measurements to the PA is carried out. The results are presented and discussed in terms of the influence of Ge content on the properties of the copper zinc tin germanium selenium (CZTGSe) compounds.
AB - Herein, the influence of the germanium (Ge) content on the surface recombination velocity, nonradiative carrier recombination time, and thermal diffusivity of Cu2Zn(SnGe)Se4 compound from photoacoustic (PA) measurements is presented. The compounds are synthesized by a sequential thermal evaporation technique and thermal annealing. The order of the metallic stacks deposited on the coated molybdenum glass substrates is Cu/Sn/Cu/Zn/Ge. The thicknesses of Cu(3 nm)/Sn(248 nm)/Cu(112 nm)/Zn (174 nm) are kept constant, and only the thickness of the Ge layer is varied between 10 and 30 nm. The incorporation of germanium shows changes in the aforementioned parameters in dependence of the Ge content. Atomic force microscopy (AFM) as complementary measurements to the PA is carried out. The results are presented and discussed in terms of the influence of Ge content on the properties of the copper zinc tin germanium selenium (CZTGSe) compounds.
KW - CZTGSe thin films
KW - photoacoustic measurements
KW - sequential thermal evaporation
KW - surface recombination velocity
KW - thermal diffusivity
UR - http://www.scopus.com/inward/record.url?scp=85069858029&partnerID=8YFLogxK
U2 - 10.1002/pssa.201900260
DO - 10.1002/pssa.201900260
M3 - Artículo
AN - SCOPUS:85069858029
SN - 1862-6300
VL - 216
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 18
M1 - 1900260
ER -