TY - JOUR
T1 - Indium doped zinc oxide thin films deposited by ultrasonic spray pyrolysis technique
T2 - Effect of the substrate temperature on the physical properties
AU - Castañeda, L.
AU - Maldonado, A.
AU - Escobedo-Morales, A.
AU - Avendaño-Alejo, M.
AU - Gómez, H.
AU - Vega-Pérez, J.
AU - De La, M.
N1 - Funding Information:
The authors are grateful to M.A. Luna-Arias, M.A. Manzano, María de Lourdes Rojas Morales and A. Palafox for their contribution in film characterization. The support of Laboratorios Centrales-CINVESTAV-IPN in the scanning electron microscopy studies is also acknowledged. This work was partially supported by CONACyT , under contract number 80502 . L. Castañeda acknowledges financial support from the Instituto de Física, Vicerrectoría de Investigación y Estudios de Posgrado, Benemérita Universidad Autónoma de Puebla , and the Programa de Mejoramiento del Profesorado from the SEP México through project number PROMEP/103.5/09/4194 .
PY - 2011/6
Y1 - 2011/6
N2 - Indium doped zinc oxide (ZnO:In) thin solid films were deposited on soda-lime glass substrates by the ultrasonic spray pyrolysis technique. The effect of the substrate temperature on the electrical, morphology, and optical characteristics of ZnO:In thin films was studied. It was found that, as the substrate temperature increases, the electrical resistivity decreases, reaching a minimum value in the order of 7.3×10-3 Ω cm, at 415 °C. Further increase in the substrate temperature results on an increment on the electrical resistivity of the thin solid films. All the samples were polycrystalline with a well-defined wurtzite structure. The preferred growth shows a switching from a random orientation at low substrates temperatures to (0 0 2) in the case of films deposited at the highest substrate temperature used. As the substrate temperature increases, the corresponding surface morphology changes from an almost faceted pyramidal to round-shaped form. The optical transmittance of the films in a interval of 400 to 700 nm is around 70%, with a band gap value in the order of 3.45 eV.
AB - Indium doped zinc oxide (ZnO:In) thin solid films were deposited on soda-lime glass substrates by the ultrasonic spray pyrolysis technique. The effect of the substrate temperature on the electrical, morphology, and optical characteristics of ZnO:In thin films was studied. It was found that, as the substrate temperature increases, the electrical resistivity decreases, reaching a minimum value in the order of 7.3×10-3 Ω cm, at 415 °C. Further increase in the substrate temperature results on an increment on the electrical resistivity of the thin solid films. All the samples were polycrystalline with a well-defined wurtzite structure. The preferred growth shows a switching from a random orientation at low substrates temperatures to (0 0 2) in the case of films deposited at the highest substrate temperature used. As the substrate temperature increases, the corresponding surface morphology changes from an almost faceted pyramidal to round-shaped form. The optical transmittance of the films in a interval of 400 to 700 nm is around 70%, with a band gap value in the order of 3.45 eV.
KW - Thin solid films
KW - Ultrasonic spray pyrolysis
KW - Zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=79958163849&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2011.01.013
DO - 10.1016/j.mssp.2011.01.013
M3 - Artículo
SN - 1369-8001
VL - 14
SP - 114
EP - 119
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 2
ER -