Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters

A. Belio-Manzano; J. L. Regalado-de la Rosa; C. A. Mercado-Ornelas; I. E. Cortes-Mestizo; L. I. Espinosa-Vega; Javier Alanis; E. Castro-Camus; Donato Valdez-Pérez; Yu Kudriavtsev; V. H. Méndez-Garcia

doi:10.1016/j.jcrysgro.2022.126680

Hyperbolic-tan graded composition In_xGa_1-xAs layers for THz radiation emitters

A. Belio-Manzano, J. L. Regalado-de la Rosa, C. A. Mercado-Ornelas, I. E. Cortes-Mestizo, L. I. Espinosa-Vega, Javier Alanis, E. Castro-Camus, Donato Valdez-Pérez, Yu Kudriavtsev, V. H. Méndez-Garcia

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

Resumen

The growth and characterization of In_xGa_1-xAs layers with hyperbolic tangent In concentration profiles is presented. Along the growth the molecular beam fluxes of Ga and In, and the substrate temperature were varied. Since the concentration of In is varied during growth process the strain is expected to increase monotonically, and eventually be relaxed via dislocation formation. Positively, reordering of the ternary alloy and the improvement of its crystal quality were propitiated by annealing the samples. The gradual In concentration propitiated along the thickness of the film conduced to variations of the near-surface band bending. The THz emission from GaAs, InAs, and graded samples was investigated by femtosecond laser pumping excitation. The band-bending from hyperbolic-tan graded composition In_xGa_1-xAs layers causes depth dependence of effective mass and built-in electric fields modifying accordingly the THz emission.

Idioma original	Inglés
Número de artículo	126680
Publicación	Journal of Crystal Growth
Volumen	589
DOI	https://doi.org/10.1016/j.jcrysgro.2022.126680
Estado	Publicada - 1 jul. 2022

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10.1016/j.jcrysgro.2022.126680

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Belio-Manzano, A., Regalado-de la Rosa, J. L., Mercado-Ornelas, C. A., Cortes-Mestizo, I. E., Espinosa-Vega, L. I., Alanis, J., Castro-Camus, E., Valdez-Pérez, D., Kudriavtsev, Y., & Méndez-Garcia, V. H. (2022). Hyperbolic-tan graded composition In_xGa_1-xAs layers for THz radiation emitters. Journal of Crystal Growth, 589, Artículo 126680. https://doi.org/10.1016/j.jcrysgro.2022.126680

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title = "Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters",

abstract = "The growth and characterization of InxGa1-xAs layers with hyperbolic tangent In concentration profiles is presented. Along the growth the molecular beam fluxes of Ga and In, and the substrate temperature were varied. Since the concentration of In is varied during growth process the strain is expected to increase monotonically, and eventually be relaxed via dislocation formation. Positively, reordering of the ternary alloy and the improvement of its crystal quality were propitiated by annealing the samples. The gradual In concentration propitiated along the thickness of the film conduced to variations of the near-surface band bending. The THz emission from GaAs, InAs, and graded samples was investigated by femtosecond laser pumping excitation. The band-bending from hyperbolic-tan graded composition InxGa1-xAs layers causes depth dependence of effective mass and built-in electric fields modifying accordingly the THz emission.",

keywords = "A1. Graded composition, A1. Strain, B1. Gallium compounds, B3. THz emitters",

author = "A. Belio-Manzano and {Regalado-de la Rosa}, {J. L.} and Mercado-Ornelas, {C. A.} and Cortes-Mestizo, {I. E.} and Espinosa-Vega, {L. I.} and Javier Alanis and E. Castro-Camus and Donato Valdez-P{\'e}rez and Yu Kudriavtsev and M{\'e}ndez-Garcia, {V. H.}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2022.126680",

language = "Ingl{\'e}s",

volume = "589",

journal = "Journal of Crystal Growth",

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T1 - Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters

AU - Belio-Manzano, A.

AU - Regalado-de la Rosa, J. L.

AU - Mercado-Ornelas, C. A.

AU - Cortes-Mestizo, I. E.

AU - Espinosa-Vega, L. I.

AU - Alanis, Javier

AU - Castro-Camus, E.

AU - Valdez-Pérez, Donato

AU - Kudriavtsev, Yu

AU - Méndez-Garcia, V. H.

PY - 2022/7/1

Y1 - 2022/7/1

N2 - The growth and characterization of InxGa1-xAs layers with hyperbolic tangent In concentration profiles is presented. Along the growth the molecular beam fluxes of Ga and In, and the substrate temperature were varied. Since the concentration of In is varied during growth process the strain is expected to increase monotonically, and eventually be relaxed via dislocation formation. Positively, reordering of the ternary alloy and the improvement of its crystal quality were propitiated by annealing the samples. The gradual In concentration propitiated along the thickness of the film conduced to variations of the near-surface band bending. The THz emission from GaAs, InAs, and graded samples was investigated by femtosecond laser pumping excitation. The band-bending from hyperbolic-tan graded composition InxGa1-xAs layers causes depth dependence of effective mass and built-in electric fields modifying accordingly the THz emission.

AB - The growth and characterization of InxGa1-xAs layers with hyperbolic tangent In concentration profiles is presented. Along the growth the molecular beam fluxes of Ga and In, and the substrate temperature were varied. Since the concentration of In is varied during growth process the strain is expected to increase monotonically, and eventually be relaxed via dislocation formation. Positively, reordering of the ternary alloy and the improvement of its crystal quality were propitiated by annealing the samples. The gradual In concentration propitiated along the thickness of the film conduced to variations of the near-surface band bending. The THz emission from GaAs, InAs, and graded samples was investigated by femtosecond laser pumping excitation. The band-bending from hyperbolic-tan graded composition InxGa1-xAs layers causes depth dependence of effective mass and built-in electric fields modifying accordingly the THz emission.

KW - A1. Graded composition

KW - A1. Strain

KW - B1. Gallium compounds

KW - B3. THz emitters

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