Heating and cooling in semiconductor structures by an electric current

G. N. Logvinov; J. E. Velázquez; I. M. Lashkevych; Yu G. Gurevich

doi:10.1063/1.2345033

Heating and cooling in semiconductor structures by an electric current

G. N. Logvinov, J. E. Velázquez, I. M. Lashkevych, Yu G. Gurevich

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

34 Citas (Scopus)

Resumen

A comprehensive study of the mechanisms of heating and cooling originated by an electrical current in semiconductor devices is reported. The authors studied the Peltier, Joule, and Thomson phenomena self-consistently and found that the magnitudes of all of them were commensurable. A new formulation and interpretation of the Thomson effect are offered. The main conclusion of the present work is that the thermal analysis of any semiconductor device under real working conditions demands the inclusion of all heating and cooling mechanisms simultaneously.

Idioma original	Inglés
Número de artículo	092118
Publicación	Applied Physics Letters
Volumen	89
N.º	9
DOI	https://doi.org/10.1063/1.2345033
Estado	Publicada - 2006
Publicado de forma externa	Sí

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title = "Heating and cooling in semiconductor structures by an electric current",

abstract = "A comprehensive study of the mechanisms of heating and cooling originated by an electrical current in semiconductor devices is reported. The authors studied the Peltier, Joule, and Thomson phenomena self-consistently and found that the magnitudes of all of them were commensurable. A new formulation and interpretation of the Thomson effect are offered. The main conclusion of the present work is that the thermal analysis of any semiconductor device under real working conditions demands the inclusion of all heating and cooling mechanisms simultaneously.",

author = "Logvinov, {G. N.} and Vel{\'a}zquez, {J. E.} and Lashkevych, {I. M.} and Gurevich, {Yu G.}",

note = "Funding Information: Two of the authors (G.N.L. and Y.G.G.) wish to thank CONACYT for financial support. One of the authors (Y.G.G.) also thanks the Ministerio de Educaci{\'o}n y Ciencia (MEC) of Spain for funding his sabbatical stay at the Universidad de Salamanca under Grant No. SAB2004-0184. Another author (J.E.V.) thanks the Junta de Castilla y Le{\'o}n (SA072A05) and MEC-FEDER (TEC2005-02719/MIC) for financial support.",

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AU - Velázquez, J. E.

AU - Lashkevych, I. M.

AU - Gurevich, Yu G.

N1 - Funding Information: Two of the authors (G.N.L. and Y.G.G.) wish to thank CONACYT for financial support. One of the authors (Y.G.G.) also thanks the Ministerio de Educación y Ciencia (MEC) of Spain for funding his sabbatical stay at the Universidad de Salamanca under Grant No. SAB2004-0184. Another author (J.E.V.) thanks the Junta de Castilla y León (SA072A05) and MEC-FEDER (TEC2005-02719/MIC) for financial support.

PY - 2006

Y1 - 2006

N2 - A comprehensive study of the mechanisms of heating and cooling originated by an electrical current in semiconductor devices is reported. The authors studied the Peltier, Joule, and Thomson phenomena self-consistently and found that the magnitudes of all of them were commensurable. A new formulation and interpretation of the Thomson effect are offered. The main conclusion of the present work is that the thermal analysis of any semiconductor device under real working conditions demands the inclusion of all heating and cooling mechanisms simultaneously.

AB - A comprehensive study of the mechanisms of heating and cooling originated by an electrical current in semiconductor devices is reported. The authors studied the Peltier, Joule, and Thomson phenomena self-consistently and found that the magnitudes of all of them were commensurable. A new formulation and interpretation of the Thomson effect are offered. The main conclusion of the present work is that the thermal analysis of any semiconductor device under real working conditions demands the inclusion of all heating and cooling mechanisms simultaneously.

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DO - 10.1063/1.2345033

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Heating and cooling in semiconductor structures by an electric current

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