TY - JOUR
T1 - Growth and characterization of ZnO films deposited by chemical bath and annealed by microwaves (CBD-AμW)
AU - Díaz-Reyes, J.
AU - Martínez-Juárez, J.
AU - García, M. L.
AU - Juárez, G.
AU - Galeazzi, R.
N1 - Publisher Copyright:
© 2010 IOP Publishing Ltd.
PY - 2010
Y1 - 2010
N2 - A study of the growth and the physical properties of ZnO films deposited by chemical bath technique and annealed by microwave are presented. For the deposition solution the molar ratio between zinc nitrate and urea is varied in a range of 1:1... 1:10. By X-ray obtains that layers have hexagonal polycrystalline wurtzite type unitary cell. The Raman spectra show the first order experimental Raman spectra of ZnO. The first order Raman modes are identified in the ZnO Raman spectra. The 300K photoluminescence shows radiative bands labelled by red, yellow, green and violet bands, which are associated to defects of oxygen and zinc vacancies. By EDS measurements determined their stoichiometry, which allows relating it with the intensity of radiative bands associated to oxygen and zinc vacancies.
AB - A study of the growth and the physical properties of ZnO films deposited by chemical bath technique and annealed by microwave are presented. For the deposition solution the molar ratio between zinc nitrate and urea is varied in a range of 1:1... 1:10. By X-ray obtains that layers have hexagonal polycrystalline wurtzite type unitary cell. The Raman spectra show the first order experimental Raman spectra of ZnO. The first order Raman modes are identified in the ZnO Raman spectra. The 300K photoluminescence shows radiative bands labelled by red, yellow, green and violet bands, which are associated to defects of oxygen and zinc vacancies. By EDS measurements determined their stoichiometry, which allows relating it with the intensity of radiative bands associated to oxygen and zinc vacancies.
UR - http://www.scopus.com/inward/record.url?scp=84908432242&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/12/1/012003
DO - 10.1088/1757-899X/12/1/012003
M3 - Artículo de la conferencia
AN - SCOPUS:84908432242
SN - 1757-8981
VL - 12
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
IS - 1
M1 - 012003
T2 - 4th International Conference on Innovation in Thin Film Processing and Characterization, ITFPC 2009
Y2 - 17 November 2009 through 20 November 2009
ER -