TY - JOUR
T1 - Growth and characterization of Cd1-XZnXTe (0 ≤ x ≤ 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs
AU - Castillo Ojeda, R. S.
AU - Díaz-Reyes, J.
AU - Galván-Arellano, M.
AU - Rivera-Hernández, K. N.
AU - Villa-Ramírez, M. S.
AU - Luna-Suarez, S.
N1 - Publisher Copyright:
© 2019 Revista Mexicana de Física.
PY - 2018
Y1 - 2018
N2 - In this work are presented the results obtained from the deposition of Cd1-XZnXTe nanolayers using as precursor the vapours of the elements Zn, Te, and a mixture of Cd and Zn on GaAs and GaSb (001) substrates by Atomic Layer Deposition technique (ALD), which allows the deposition of layers of nanometric dimensions. At each exposure of the growth surface to the of cation or anion precursors vapours, this surface is saturated. Therefore, it is considered that the process is self-regulated. The ZnTe layers were grown in a wide range of temperatures; however, ZnTe nanolayers with a shiny mirror-like surface could be grown at temperatures between 370 and 410°C. Temperatures higher than 400°C were necessary for the CdTe growth. The layers of the Cd1-XZnXTe ternary alloy were deposited at temperature range of 400 and 425°C. The grown nanofilms were characterized by Raman spectroscopy and high-resolution X-ray diffraction. The Raman spectrum shows the peak corresponding to LO-ZnTe at 208 cm-1, which is weak and is slightly redshifted in comparison with the reported for the bulk ZnTe. For the case of the CdTe nanolayers, Raman spectrum presents the LO-CdTe peak, which is indicative of the successfully growth of the nanolayers, its weakness and its slight redshifted in comparison with the reported for the bulk CdTe can be related with the nanometric characteristic of this layer. The performed high resolution X-ray diffraction measurements allowed to study some important characteristics, as the crystallinity of the grown layers. Additionally, the performed HR-XRD measurements suggest that the crystalline quality have dependence with the growth temperature.
AB - In this work are presented the results obtained from the deposition of Cd1-XZnXTe nanolayers using as precursor the vapours of the elements Zn, Te, and a mixture of Cd and Zn on GaAs and GaSb (001) substrates by Atomic Layer Deposition technique (ALD), which allows the deposition of layers of nanometric dimensions. At each exposure of the growth surface to the of cation or anion precursors vapours, this surface is saturated. Therefore, it is considered that the process is self-regulated. The ZnTe layers were grown in a wide range of temperatures; however, ZnTe nanolayers with a shiny mirror-like surface could be grown at temperatures between 370 and 410°C. Temperatures higher than 400°C were necessary for the CdTe growth. The layers of the Cd1-XZnXTe ternary alloy were deposited at temperature range of 400 and 425°C. The grown nanofilms were characterized by Raman spectroscopy and high-resolution X-ray diffraction. The Raman spectrum shows the peak corresponding to LO-ZnTe at 208 cm-1, which is weak and is slightly redshifted in comparison with the reported for the bulk ZnTe. For the case of the CdTe nanolayers, Raman spectrum presents the LO-CdTe peak, which is indicative of the successfully growth of the nanolayers, its weakness and its slight redshifted in comparison with the reported for the bulk CdTe can be related with the nanometric characteristic of this layer. The performed high resolution X-ray diffraction measurements allowed to study some important characteristics, as the crystallinity of the grown layers. Additionally, the performed HR-XRD measurements suggest that the crystalline quality have dependence with the growth temperature.
KW - Atomic layer deposition (ALD)
KW - CdZnTe ternary alloy
KW - Defect generation mechanism
KW - III-V substrates
KW - Te and Cd mixture of elements
KW - Zn
UR - http://www.scopus.com/inward/record.url?scp=85099447219&partnerID=8YFLogxK
U2 - 10.31349/REVMEXFIS.64.206
DO - 10.31349/REVMEXFIS.64.206
M3 - Artículo
AN - SCOPUS:85099447219
SN - 0035-001X
VL - 64
SP - 206
EP - 215
JO - Revista Mexicana de Fisica
JF - Revista Mexicana de Fisica
IS - 3
ER -