Growth and characterisation of InP by close vapour transport

Close space vapour transport is a technique that allows rapid and inexpensive epitaxial growth using water vapour as the transporting gas. The number of parameters governing the growth is small (source and substrate temperature, water vapour partial pressure) and these parameters can be varied independently. Epitaxial InP layers have been grown using this technique. The layers have been characterised by double crystal X-ray diffraction, secondary ion mass spectrometry, Hall effect, and photoluminescence. The evolution of the nature and concentration of shallow impurities and deep defects as a function of the growth parameters has been monitored.