@inproceedings{2a8c477502494a9f95da1c001766f667,
title = "Gate length scaling in high fMAX Si/SiGe n-MODFET",
abstract = "The performances of strained channel Si/Si0.6Ge0.4n-MODFETs as a function of gatelength have been investigated experimentally at 300K. The direct-current, microwave and noise performances of devices with gatelengths ranging from 0.5 μm to 0.1 μm are presented. Maximum oscillation frequency fMAX of 158 GHz is obtained for a 0.1 X 100 μm with fT = 42 GHz and a minimum noise figure NFmin = 0.5 dB at 2.5 GHz showing the potential of SiGe technology. The dependence of small signal, and noise parameters on gatelength and biases has been analyzed to assess the impact of non stationary transport and of short channel effects on the device behavior.",
author = "F. Aniel and M. Enciso-Aguilar and P. Crozat and R. Adde and T. Hackbarth and U. Seiler and Herzog, {H. J.} and U. Konig and {Von K{\"a}nel}, H.",
year = "2002",
doi = "10.1109/ESSDERC.2002.194896",
language = "Ingl{\'e}s",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "167--170",
editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",
booktitle = "European Solid-State Device Research Conference",
address = "Estados Unidos",
note = "32nd European Solid-State Device Research Conference, ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",
}