Fabrication, characterization and simulation of PTFT inverters using F8T2 as active layer

The copolymer Poly(9,9-dioctylFluorene-co-BiTthiophene) (F8T2) have been used as organic semiconductor for the fabrication of Polymeric p-type Thin-Film Transistors (PTFT's), which can show high on/off ratio in the transfer characteristics. In this manuscript, we fabricate and characterize polymeric Active Saturated Load Inverter (ASLI), using Poly (Methyl MethAcrylate) (PMMA) as the dielectric film and F8T2 as the active semiconductor. Simulation of the inverters was done using SmartSpice where a compact model previously developed by us was included. We show that, although PTFTs using F8T2 present non-ohmic resistance at the drain and source, they can be satisfactorily used as ASLI. We also validate that Spice simulations, using the Unified Model and Extraction Method (UMEM) can be used for the design of polymeric circuits.