TY - GEN
T1 - Exploiting the ambipolarity in emerging transistors for high-frequency applications
AU - Pacheco-Sanchez, Anibal
AU - Ramos-Silva, J. Noe
AU - Mavredakis, Nikolaos
AU - Ramirez-Garcia, Eloy
AU - Jimenez, David
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Efficient phase and frequency shift-keying modulator designs proposed with RF carbon-based transistor technologies at 2.4 GHz and 1.2 GHz, respectively, are discussed in this work. Their overall performance and power dissipation are presented. Experimentally-calibrated compact models of carbon nanotube have been used to carry out these designs. The multifunctionality features of the designs leading to the modulators proposals have been enabled by the inherent devices ambipolarity in addition to a proper design of matching and stability networks. The designs proposed in this work are suggested as potential on-chip solutions for communication systems since only one device and one circuit have been used for each modulation scheme. The requirement of biasing control CMOS-based circuits is pointed out towards heterogeneous integration of emerging transistor technologies (back-end-of-line) with silicon technologies (front-end-of-line). Brief reviews of the internal physics mechanisms leading to ambipolar transistor operation as well as their proof-of-concept applications are also presented.
AB - Efficient phase and frequency shift-keying modulator designs proposed with RF carbon-based transistor technologies at 2.4 GHz and 1.2 GHz, respectively, are discussed in this work. Their overall performance and power dissipation are presented. Experimentally-calibrated compact models of carbon nanotube have been used to carry out these designs. The multifunctionality features of the designs leading to the modulators proposals have been enabled by the inherent devices ambipolarity in addition to a proper design of matching and stability networks. The designs proposed in this work are suggested as potential on-chip solutions for communication systems since only one device and one circuit have been used for each modulation scheme. The requirement of biasing control CMOS-based circuits is pointed out towards heterogeneous integration of emerging transistor technologies (back-end-of-line) with silicon technologies (front-end-of-line). Brief reviews of the internal physics mechanisms leading to ambipolar transistor operation as well as their proof-of-concept applications are also presented.
KW - CMOS
KW - CNTFET
KW - FSK
KW - GFET
KW - PSK
KW - heterogeneous integration
KW - high-frequency
UR - http://www.scopus.com/inward/record.url?scp=85145438673&partnerID=8YFLogxK
U2 - 10.1109/DCIS55711.2022.9970151
DO - 10.1109/DCIS55711.2022.9970151
M3 - Contribución a la conferencia
AN - SCOPUS:85145438673
T3 - DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems
BT - DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 37th Conference on Design of Circuits and Integrated Systems, DCIS 2022
Y2 - 16 November 2022 through 18 November 2022
ER -