Excitation photon energy dependence of photoluminescence in CdTe thin films

M. Cárdenas-García, C. Mejía-García, G. Contreras-Puente, J. Aguilar-Hernández, J. L. López-López

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

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Resumen

We report the photoluminescence spectra of CdTe polycrystalline thin films at 10 K as a function of the exciting photon energy in the 1.59 to 1.71 eV range. Our results indicate that the ratio of the maximum intensity of the bound exciton band (Ib at ≈ 1.59 eV) to that of the defect band (Id at ≈ 1.45 eV) shows resonances in this range. Above the band-gap region (Eg = 1.606 eV) and near Eg + (latin small letter h with stroke)ωLO (with (Latin small letter h with stroke)ωLO the LO-phonon energy) a first resonant feature is detected. This behavior is attributed to the efficient emission of LO-phonons during the thermalization process of the created photocarriers in their corresponding bands. Below and near Eg a second and lower resonance is also present, which can be explained in terms of the direct formation of bound excitons.

Idioma originalInglés
Páginas (desde-hasta)27-32
Número de páginas6
Publicaciónphysica status solidi (b)
Volumen215
N.º1
DOI
EstadoPublicada - sep. 1999

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