EXCESS CURRENTS AND STRUCTURE DEFECTS IN In//xGa//1// minus //xAs:Si LIGHT-EMITTING DIODES.

T. V. Torchinskaya; E. Yu Brailovskii; G. N. Semenova; L. A. Matveeva; M. A. Mirzazhanov; T. G. Berdinskikh; I. B. Puzin; N. Arias

EXCESS CURRENTS AND STRUCTURE DEFECTS IN In//xGa//1// minus //xAs:Si LIGHT-EMITTING DIODES.

T. V. Torchinskaya, E. Yu Brailovskii, G. N. Semenova, L. A. Matveeva, M. A. Mirzazhanov, T. G. Berdinskikh, I. B. Puzin, N. Arias

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Resumen

The relationship between the excess currents and strucure defects in In//xGa//1// minus //xAs:Si/GaAs (x equals 0. 035) light-emitting p-n homojunctions was determined by recording the current-voltage and capacitance-voltage characteristics and by metallographic investigations of diodes with different numbers of defects after irradiation with subthreshold (E equals 250 kev) electrons. A strong structural nonequilibrium of the heterojunction system was demonstrated and a correlation was established between the dislocation densities at the heterojunction and in the space-charge region of the p-n junction, on the one hand, and the excess current, on the other.

Idioma original	Inglés
Páginas (desde-hasta)	875-878
Número de páginas	4
Publicación	Soviet physics. Semiconductors
Volumen	18
N.º	8
Estado	Publicada - ago. 1984
Publicado de forma externa	Sí

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title = "EXCESS CURRENTS AND STRUCTURE DEFECTS IN In//xGa//1// minus //xAs:Si LIGHT-EMITTING DIODES.",

abstract = "The relationship between the excess currents and strucure defects in In//xGa//1// minus //xAs:Si/GaAs (x equals 0. 035) light-emitting p-n homojunctions was determined by recording the current-voltage and capacitance-voltage characteristics and by metallographic investigations of diodes with different numbers of defects after irradiation with subthreshold (E equals 250 kev) electrons. A strong structural nonequilibrium of the heterojunction system was demonstrated and a correlation was established between the dislocation densities at the heterojunction and in the space-charge region of the p-n junction, on the one hand, and the excess current, on the other.",

author = "Torchinskaya, {T. V.} and Brailovskii, {E. Yu} and Semenova, {G. N.} and Matveeva, {L. A.} and Mirzazhanov, {M. A.} and Berdinskikh, {T. G.} and Puzin, {I. B.} and N. Arias",

year = "1984",

month = aug,

language = "Ingl{\'e}s",

volume = "18",

pages = "875--878",

journal = "Soviet physics. Semiconductors",

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number = "8",

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TY - JOUR

T1 - EXCESS CURRENTS AND STRUCTURE DEFECTS IN In//xGa//1// minus //xAs:Si LIGHT-EMITTING DIODES.

AU - Torchinskaya, T. V.

AU - Brailovskii, E. Yu

AU - Semenova, G. N.

AU - Matveeva, L. A.

AU - Mirzazhanov, M. A.

AU - Berdinskikh, T. G.

AU - Puzin, I. B.

AU - Arias, N.

PY - 1984/8

Y1 - 1984/8

N2 - The relationship between the excess currents and strucure defects in In//xGa//1// minus //xAs:Si/GaAs (x equals 0. 035) light-emitting p-n homojunctions was determined by recording the current-voltage and capacitance-voltage characteristics and by metallographic investigations of diodes with different numbers of defects after irradiation with subthreshold (E equals 250 kev) electrons. A strong structural nonequilibrium of the heterojunction system was demonstrated and a correlation was established between the dislocation densities at the heterojunction and in the space-charge region of the p-n junction, on the one hand, and the excess current, on the other.

AB - The relationship between the excess currents and strucure defects in In//xGa//1// minus //xAs:Si/GaAs (x equals 0. 035) light-emitting p-n homojunctions was determined by recording the current-voltage and capacitance-voltage characteristics and by metallographic investigations of diodes with different numbers of defects after irradiation with subthreshold (E equals 250 kev) electrons. A strong structural nonequilibrium of the heterojunction system was demonstrated and a correlation was established between the dislocation densities at the heterojunction and in the space-charge region of the p-n junction, on the one hand, and the excess current, on the other.

UR - http://www.scopus.com/inward/record.url?scp=0021471949&partnerID=8YFLogxK

M3 - Artículo

SN - 0038-5700

VL - 18

SP - 875

EP - 878

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

IS - 8

ER -

EXCESS CURRENTS AND STRUCTURE DEFECTS IN In//xGa//1// minus //xAs:Si LIGHT-EMITTING DIODES.

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