Er3+-doped tellurite glass waveguides produced by Fiber on Glass (FOG) method

V. A.G. Rivera, E. Rodriguez, E. F. Chillcce, I. O. Mazali, C. L. Cesar, L. C. Barbosa

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

In this work we used a Thermal Mechanic Analysis equipment to produce the channel FOG waveguides by pressing an Er3+ doped tellurite glass optical fiber against one Er3+ ion doped tellurite glass substrate kept under Tc ±30 °C (Tc = soft point). The luminescence and waveguide refractive index were measured. Scanning electron microscopy was used to observe the obtained structure. The objective is to produce a new concept in components of integrated optical circuits. Then this work report the production of Er3+-doped tellurite glass channel waveguides using the novel concept of Benson et al[1] of fiber on glass (FOG). To succeed with this technique it is important to correlate the main thermo-physical characteristics of the substrate and the fiber, which are the transition temperature Tg, the temperature of the onset of crystallization Tx, the maximum crystallization temperature T c and the thermal expansion coefficient. The Tg, Tx and Tc values were determined by Differential Thermal Analysis (DTA), while the thermal expansion coefficient was determined by Thermal Mechanical Analysis (TMA). For the FOG purpose the thermal stability range, Tx - T g, is an important temperature region which defines if the glass will have enough viscosity to shape in the FOG concept.

Idioma originalInglés
Título de la publicación alojadaProceedings of SPIE - The International Society for Optical Engineering
DOI
EstadoPublicada - 2006
Publicado de forma externa
EventoOptical Components and Materials III - San Jose, CA, Estados Unidos
Duración: 23 ene. 200625 ene. 2006

Serie de la publicación

NombreProceedings of SPIE - The International Society for Optical Engineering
Volumen6116
ISSN (versión impresa)0277-786X

Conferencia

ConferenciaOptical Components and Materials III
País/TerritorioEstados Unidos
CiudadSan Jose, CA
Período23/01/0625/01/06

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