Resumen
The results of correlated electron paramagnetic resonance (EPR) and photoluminescence (PL) study of obliquely deposited porous SiOx films after step-by-step 15 min annealing within 105 min in vacuum at 950°C are presented. The low intensity symmetrical and featureless EPR line with a g-value g=2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds (DB) of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the defect system, and a correlation of the PL intensity with decreasing of the DB EPR signal are discussed.
Idioma original | Inglés |
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Páginas (desde-hasta) | 51-56 |
Número de páginas | 6 |
Publicación | Materials Research Society Symposium Proceedings |
Volumen | 1617 |
DOI | |
Estado | Publicada - 2013 |
Evento | 22nd International Materials Research Congress, IMRC 2013 - Cancun, México Duración: 11 ago. 2013 → 15 ago. 2013 |