Emission inhomogeneity in InAs quantum dot DWELL structures

The photoluminescence spectra and its homogeneity for InAs quantum dots (QDs) embedded into In_0.15 Ga_0.85As/GaAs quantum well (QW) structures with QDs grown at different temperatures (470-535 °C) have been investigated at 300 K. Photoluminescence (PL) spectra along the scanning line crossed the wafers were measured at 300 K in a set of points on the QD structures under the excitation of the 804 nm line of a solid state IR laser at an excitation power density of 100 W/cm². In QD structures with InAs QDs grown at 470°C the low integrated PL intensity, the high dispersion of QD sizes in ensemble and, as a result, the large value of FWHM (50-70meV), but the low dispersion of QD ensemble parameters along the line crossed the structures have been detected. In QD structures grown at high temperatures 490-535 °C the high integrated PL intensity, the low dispersion of QD sizes in ensemble and, as a result, less values of FWHM, but the essential dispersion of QD ensemble parameters along the line crossed the structures have been revealed. The reasons of these types of PL nonhomogeneity have been discussed.