Electronic properties of [111] hydrogen passivated Ge nanowires with surface substitutional lithium

L. G. Arellano, F. Salazar, A. Trejo Baños, A. Miranda, L. A. Pérez, M. Cruz-Irisson

Producción científica: Contribución a una revistaArtículo de la conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

In this work, a density functional theory study of the lithium (Li) effects on the properties of hydrogenated germanium nanowires (H-GeNWs) is developed. In particular, the electronic band structures, densities of states, formation energies, and Li binding energies of H-GeNWs grown along the [111] crystallographic direction with a diamond structure for different concentrations of surface substitutional Li atoms were studied. Ge nanowires with hexagonal cross sections and three different diameters were considered. The results indicate that all studied H-GeNWs maintain a semiconducting behaviour and the size of the energy band gap is a function of the diameter and the concentration of substitutional surface Li atoms. The formation energy analysis reveals than the energy stability of the nanowires increases when the nanowire diameter and the concentration of Li atoms augment. The results of this work give insight of how the electronic properties of H-GeNWs change during the charging process and open the possibility to incorporate them as electrodes in Li-ion batteries.

Idioma originalInglés
Número de artículo012004
PublicaciónIOP Conference Series: Materials Science and Engineering
Volumen840
N.º1
DOI
EstadoPublicada - 2 jun. 2020
Evento2020 4th International Conference on Materials Engineering and Nano Sciences, ICMENS 2020 - Pattaya, Tailandia
Duración: 13 mar. 202015 mar. 2020

Huella

Profundice en los temas de investigación de 'Electronic properties of [111] hydrogen passivated Ge nanowires with surface substitutional lithium'. En conjunto forman una huella única.

Citar esto