Electroluminescent devices based on junctions of silicon-rich oxide with indium doped zinc oxide thin solid films

Electroluminescent properties of silicon-rich oxide (SRO) films and its different thickness coated with indium doped zinc oxide [ZnO:In] were analyzed in this investigation. Intense continuous visible and infrared luminescence was observed when devices were forward bias. The electroluminescence (EL) measurements showed a broad visible spectrum around 410 to 1100 nm. It comprises two predominant regions, the first centered on 730 nm and the second on 880 nm. The results of the analysis showed that the source of these emissions is attributed to the interfacial defects and the silicon nanocrystals present in the SRO films. A device operating model is suggested from the results obtained, in which electroluminescent emission corresponding to 730 nm may be originated in the nanocrystals present in the SRO; these nanocrystals are excited when the electric current crosses through conductor paths present in the devices.