TY - GEN
T1 - Electrical and optical characterization of AgInSnS4 thin films grown by spray pyrolysis
AU - Cayente-Romero, J. J.
AU - Peza-Tapia, J. M.
AU - Albor- Aguilera, M. L.
AU - De Leon- Gutiérrez, L. R.
AU - Ortega- López, M.
AU - De Ita-De La Torre, A.
PY - 2004
Y1 - 2004
N2 - Electrical and optical properties of AgInSnS 4 polycrystalline thin films grown by the spray-pyrolysis method were studied. X- ray diffraction measurements revealed a cubic structure for AgInSnS 4 thin films with lattice parameter about 10.77 Å. We found that all the films exhibit p-type conduction and room-temperature conductivity ranging from 10 -1 to 10 -2 S/cm. Plots of the conductivity versus 10 3/T showed an Arrhenius-like behavior, from which activation energies E a1=0.07- 0.20 eV and E a2 = 0.23-0.40 eV were determined. The results suggest that the grain boundary scattering and the ionization of shallow acceptors dominate the AgInSnS 4 conductivity. The AgInSnS 4 absorption spectrum revealed an energy gap around Eg = 1.89 eV, which was associated to direct - allowed transitions.
AB - Electrical and optical properties of AgInSnS 4 polycrystalline thin films grown by the spray-pyrolysis method were studied. X- ray diffraction measurements revealed a cubic structure for AgInSnS 4 thin films with lattice parameter about 10.77 Å. We found that all the films exhibit p-type conduction and room-temperature conductivity ranging from 10 -1 to 10 -2 S/cm. Plots of the conductivity versus 10 3/T showed an Arrhenius-like behavior, from which activation energies E a1=0.07- 0.20 eV and E a2 = 0.23-0.40 eV were determined. The results suggest that the grain boundary scattering and the ionization of shallow acceptors dominate the AgInSnS 4 conductivity. The AgInSnS 4 absorption spectrum revealed an energy gap around Eg = 1.89 eV, which was associated to direct - allowed transitions.
UR - http://www.scopus.com/inward/record.url?scp=24644502569&partnerID=8YFLogxK
M3 - Contribución a la conferencia
AN - SCOPUS:24644502569
SN - 0780385314
SN - 9780780385313
T3 - 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE
SP - 292
EP - 294
BT - 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE
T2 - 2004 1st International Conference on Electrical and Electronics Engineering, ICEEE
Y2 - 8 September 2004 through 10 September 2004
ER -