TY - JOUR
T1 - Effects of Cd vacancies on the electrical properties of polycrystalline CdTe sputtered films
AU - Becerril, M.
AU - Zelaya-Angel, O.
AU - Vargas-García, J. R.
AU - Ramírez-Bon, R.
AU - González-Hernández, J.
N1 - Funding Information:
The authors thank M. Guerrero, Z. Rivera-Alvarez, A. Guillen-Cervantes, H. Silva-López and M.A. Hernández for their helpful technical assistance. This work was financially supported by CONACyT, México.
PY - 2001/6/1
Y1 - 2001/6/1
N2 - Polycrystalline CdTe films were grown on 7059 Corning glass substrates at room temperature by sputtering from a pure CdTe target and by co-sputtering from a composite CdTe-Cd target. The electrical, optical and structural properties of the films were analyzed as a function of their Cd concentration. It was found that the films grown from the pure CdTe target were Cd-deficient with electrical resistivity of about 107 - 108 Ωcm and those grown from the CdTe-Cd target were Cd-rich with electrical resistivity of the order of 103 Ωcm. Dark electrical current vs 1/KBT measurements showed that the CdTe films with low cadmium content (< 50 at.%) exhibit an unusual current peak in the range of 1/KBT = 40 - 60 eV-1. When the cadmium composition in the CdTe films approaches 50 at.%, this effect vanishes and the current has an exponential behavior for 1/KBT > 40 eV-1. The current peak was associated with the presence of Cd vacancies in the CdTe lattice.
AB - Polycrystalline CdTe films were grown on 7059 Corning glass substrates at room temperature by sputtering from a pure CdTe target and by co-sputtering from a composite CdTe-Cd target. The electrical, optical and structural properties of the films were analyzed as a function of their Cd concentration. It was found that the films grown from the pure CdTe target were Cd-deficient with electrical resistivity of about 107 - 108 Ωcm and those grown from the CdTe-Cd target were Cd-rich with electrical resistivity of the order of 103 Ωcm. Dark electrical current vs 1/KBT measurements showed that the CdTe films with low cadmium content (< 50 at.%) exhibit an unusual current peak in the range of 1/KBT = 40 - 60 eV-1. When the cadmium composition in the CdTe films approaches 50 at.%, this effect vanishes and the current has an exponential behavior for 1/KBT > 40 eV-1. The current peak was associated with the presence of Cd vacancies in the CdTe lattice.
KW - A. Semiconductors
KW - B. Plasma deposition
KW - B. Thin films
KW - D. Electrical conductivity
UR - http://www.scopus.com/inward/record.url?scp=0035372258&partnerID=8YFLogxK
U2 - 10.1016/S0022-3697(00)00284-5
DO - 10.1016/S0022-3697(00)00284-5
M3 - Artículo
SN - 0022-3697
VL - 62
SP - 1081
EP - 1085
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 6
ER -