Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (T_GR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the T_GR to higher temperatures without significant alloy decomposition. The increase of T_GR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.