Effect of free carriers on the Raman frequency of ultraheavily doped n-Si

G. Contreras; A. K. Sood; M. Cardona; A. Compaan

doi:10.1016/0038-1098(84)90574-X

Effect of free carriers on the Raman frequency of ultraheavily doped n-Si

G. Contreras, A. K. Sood, M. Cardona, A. Compaan

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

30 Citas (Scopus)

Resumen

The Raman phonon frequency of Si heavily doped with P, As, and Sb by means of ion implantation and laser annealing (IILA) has been measured. This frequency decreases with increasing doping. The experimental results are interpreted in terms of the calculated self energy for phonons interacting with free electrons.

Idioma original	Inglés
Páginas (desde-hasta)	303-305
Número de páginas	3
Publicación	Solid State Communications
Volumen	49
N.º	4
DOI	https://doi.org/10.1016/0038-1098(84)90574-X
Estado	Publicada - ene. 1984
Publicado de forma externa	Sí

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title = "Effect of free carriers on the Raman frequency of ultraheavily doped n-Si",

abstract = "The Raman phonon frequency of Si heavily doped with P, As, and Sb by means of ion implantation and laser annealing (IILA) has been measured. This frequency decreases with increasing doping. The experimental results are interpreted in terms of the calculated self energy for phonons interacting with free electrons.",

author = "G. Contreras and Sood, {A. K.} and M. Cardona and A. Compaan",

year = "1984",

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T1 - Effect of free carriers on the Raman frequency of ultraheavily doped n-Si

AU - Contreras, G.

AU - Sood, A. K.

AU - Cardona, M.

AU - Compaan, A.

PY - 1984/1

Y1 - 1984/1

N2 - The Raman phonon frequency of Si heavily doped with P, As, and Sb by means of ion implantation and laser annealing (IILA) has been measured. This frequency decreases with increasing doping. The experimental results are interpreted in terms of the calculated self energy for phonons interacting with free electrons.

AB - The Raman phonon frequency of Si heavily doped with P, As, and Sb by means of ion implantation and laser annealing (IILA) has been measured. This frequency decreases with increasing doping. The experimental results are interpreted in terms of the calculated self energy for phonons interacting with free electrons.

UR - http://www.scopus.com/inward/record.url?scp=0021201776&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(84)90574-X

DO - 10.1016/0038-1098(84)90574-X

M3 - Artículo

SN - 0038-1098

VL - 49

SP - 303

EP - 305

JO - Solid State Communications

JF - Solid State Communications

IS - 4

ER -

Effect of free carriers on the Raman frequency of ultraheavily doped n-Si

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