Effect of CdS thickness on CdS/CdTe quantum efficiency

J. E. Granata; J. R. Sites; G. Contreras-Puente; A. D. Compaan

Effect of CdS thickness on CdS/CdTe quantum efficiency

J. E. Granata, J. R. Sites, G. Contreras-Puente, A. D. Compaan

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

Resumen

A significant photocurrent loss in CdS/CdTe solar cells is due to window-layer CdS bandgap absorption below 520 nm. This work evaluates a coordinated effort by six laboratories to optimize the CdS thickness to increase CdTe cell performance. Quantum efficiency is used to compare CdS/CdTe cell photocurrent performance for various CdS window-layer thicknesses in the range of 400 angstrom to 2500 angstrom. The contribution to Jsc from wavelengths below 520 nm, corresponding to the CdS bandgap, shows a photocurrent difference of roughly 5 mA/cm² between the practical thick and thin CdS layer thicknesses, corresponding to a possible efficiency difference between 12% and 15%. Additionally, there appears to be a process-dependent lower limit to the minimum CdS thicknesses for good-junction cells.

Idioma original	Inglés
Páginas (desde-hasta)	853-856
Número de páginas	4
Publicación	Conference Record of the IEEE Photovoltaic Specialists Conference
Estado	Publicada - 1996
Publicado de forma externa	Sí
Evento	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA Duración: 13 may. 1996 → 17 may. 1996

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title = "Effect of CdS thickness on CdS/CdTe quantum efficiency",

abstract = "A significant photocurrent loss in CdS/CdTe solar cells is due to window-layer CdS bandgap absorption below 520 nm. This work evaluates a coordinated effort by six laboratories to optimize the CdS thickness to increase CdTe cell performance. Quantum efficiency is used to compare CdS/CdTe cell photocurrent performance for various CdS window-layer thicknesses in the range of 400 angstrom to 2500 angstrom. The contribution to Jsc from wavelengths below 520 nm, corresponding to the CdS bandgap, shows a photocurrent difference of roughly 5 mA/cm2 between the practical thick and thin CdS layer thicknesses, corresponding to a possible efficiency difference between 12% and 15%. Additionally, there appears to be a process-dependent lower limit to the minimum CdS thicknesses for good-junction cells.",

author = "Granata, {J. E.} and Sites, {J. R.} and G. Contreras-Puente and Compaan, {A. D.}",

year = "1996",

language = "Ingl{\'e}s",

pages = "853--856",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

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TY - JOUR

T1 - Effect of CdS thickness on CdS/CdTe quantum efficiency

AU - Granata, J. E.

AU - Sites, J. R.

AU - Contreras-Puente, G.

AU - Compaan, A. D.

PY - 1996

Y1 - 1996

N2 - A significant photocurrent loss in CdS/CdTe solar cells is due to window-layer CdS bandgap absorption below 520 nm. This work evaluates a coordinated effort by six laboratories to optimize the CdS thickness to increase CdTe cell performance. Quantum efficiency is used to compare CdS/CdTe cell photocurrent performance for various CdS window-layer thicknesses in the range of 400 angstrom to 2500 angstrom. The contribution to Jsc from wavelengths below 520 nm, corresponding to the CdS bandgap, shows a photocurrent difference of roughly 5 mA/cm2 between the practical thick and thin CdS layer thicknesses, corresponding to a possible efficiency difference between 12% and 15%. Additionally, there appears to be a process-dependent lower limit to the minimum CdS thicknesses for good-junction cells.

AB - A significant photocurrent loss in CdS/CdTe solar cells is due to window-layer CdS bandgap absorption below 520 nm. This work evaluates a coordinated effort by six laboratories to optimize the CdS thickness to increase CdTe cell performance. Quantum efficiency is used to compare CdS/CdTe cell photocurrent performance for various CdS window-layer thicknesses in the range of 400 angstrom to 2500 angstrom. The contribution to Jsc from wavelengths below 520 nm, corresponding to the CdS bandgap, shows a photocurrent difference of roughly 5 mA/cm2 between the practical thick and thin CdS layer thicknesses, corresponding to a possible efficiency difference between 12% and 15%. Additionally, there appears to be a process-dependent lower limit to the minimum CdS thicknesses for good-junction cells.

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M3 - Artículo de la conferencia

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JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Effect of CdS thickness on CdS/CdTe quantum efficiency

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