Resumen
We report the photoluminescence spectra of CdTe polycrystalline thin films at 10 K as a fuction of the exciting photon energy in the 1.62-1.72 eV range, using a Ti-Sapphire laser as the exciting light. Our preliminary results indicate that the ratio associated to the maximum intensity of the bound exciton band (IE) to the corresponding associated to the defect band (ID) shows a resonant increment in the range between 1.62-1.65 eV of the excitation photon energy. This behavior is attributed to the efficient emission of LO-photons during the thermalization process of the created photocarriers in their corresponding bands. Moreover, as a result an increase also of bound excitons to Cd vacancies is also observed. We have also identified in the non-resonance region two deep levels associated to the defects band, through the deconvolution in a double structure of this band.
Idioma original | Inglés |
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Páginas (desde-hasta) | 265-268 |
Número de páginas | 4 |
Publicación | Revista Mexicana de Fisica |
Volumen | 46 |
N.º | 3 |
Estado | Publicada - jun. 2000 |