TY - JOUR
T1 - Early fault detection in SiC-MOSFET with application in boost converter
AU - Hernández-González, Leobardo
AU - Arvizu-Ogilvie, Climaco
AU - Tapia-Hernández, Alejandro
AU - Ponce-Silva, Mario
AU - Claudio-Sánchez, Abraham
AU - Rodríguez-Blanco, Marco
AU - Aguayo-Alquicira, Jesús
N1 - Publisher Copyright:
© 2018, Universidad de Antioquia.
PY - 2018
Y1 - 2018
N2 - This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is quick detection since the evaluation is done while the SiC Mosfet is turning-on. With this method fast detection is allowed for short-circuit and open-circuit failure with small times for detection which prevents to spread the failure to the full system. To validate the fault detection circuit a boost converter with SiC-Mosfet was designed. Experimental results validate the reliability of the proposal.
AB - This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is quick detection since the evaluation is done while the SiC Mosfet is turning-on. With this method fast detection is allowed for short-circuit and open-circuit failure with small times for detection which prevents to spread the failure to the full system. To validate the fault detection circuit a boost converter with SiC-Mosfet was designed. Experimental results validate the reliability of the proposal.
KW - Fault-detection
KW - Semiconductor
KW - Silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=85048862823&partnerID=8YFLogxK
U2 - 10.17533/udea.redin.n87a02
DO - 10.17533/udea.redin.n87a02
M3 - Artículo
SN - 0120-6230
SP - 8
EP - 15
JO - Revista Facultad de Ingenieria
JF - Revista Facultad de Ingenieria
IS - 87
ER -