TY - JOUR
T1 - Driving Third-Order Optical Nonlinearities in Photoluminescent Si Nanoparticles by Nitrogen Co-Implantation in a Silica Matrix
AU - Bornacelli, Jhovani
AU - Araiza-Sixtos, Fernando Arturo
AU - Torres-Torres, Carlos
AU - Hernández-Acosta, Marco Antonio
AU - Oliver, Alicia
AU - Rangel-Rojo, Raúl
N1 - Publisher Copyright:
© 2022 by the authors.
PY - 2022/8
Y1 - 2022/8
N2 - The photoluminescence and third-order nonlinear optical effects of co-implanted silicon nanoparticles and nitrogen ions in a silica matrix were studied. Experimental evidence shows the potential of nitrogen ions for changing optical properties exhibited by silicon nanoparticles implanted in an integrated system. The modification of the optical bandgap and photoluminescent intensity in the studied nanomaterials by the incorporation of nitrogen was analyzed. Standard two−wave mixing experiments were conducted using nanosecond and picosecond laser pulses at 532 nm wavelength. At this off-resonance condition, only multiphoton excitation can promote electrons at energies above the optical bandgap of the silicon nanoparticles. The picosecond results show that the co-implanted sample with nitrogen exhibits a three-fold enhancement of the nonlinear Kerr response. Femtosecond z-scan measurements were undertaken at 800 nm in order to explore the modification of the ultrafast nonlinear response of the samples that revealed a purely electronic Kerr nonlinearity together to saturable absorption of the SiNPs in the near-infrared. Remarkably, femtosecond results reveal that nitrogen co-implantation in the SiNPs system derives from the quenching of the third-order nonlinear optical behavior. These findings pointed out a simple approach for engineering the optical bandgap of nanocomposites, which can be controlled by a doping process based on ion-implanted nitrogen. It is highlighted that the enhanced light-matter interactions induced by nitrogen implantation can be useful for developing nonlinear integrated silicon photonics nanodevices with low power excitation.
AB - The photoluminescence and third-order nonlinear optical effects of co-implanted silicon nanoparticles and nitrogen ions in a silica matrix were studied. Experimental evidence shows the potential of nitrogen ions for changing optical properties exhibited by silicon nanoparticles implanted in an integrated system. The modification of the optical bandgap and photoluminescent intensity in the studied nanomaterials by the incorporation of nitrogen was analyzed. Standard two−wave mixing experiments were conducted using nanosecond and picosecond laser pulses at 532 nm wavelength. At this off-resonance condition, only multiphoton excitation can promote electrons at energies above the optical bandgap of the silicon nanoparticles. The picosecond results show that the co-implanted sample with nitrogen exhibits a three-fold enhancement of the nonlinear Kerr response. Femtosecond z-scan measurements were undertaken at 800 nm in order to explore the modification of the ultrafast nonlinear response of the samples that revealed a purely electronic Kerr nonlinearity together to saturable absorption of the SiNPs in the near-infrared. Remarkably, femtosecond results reveal that nitrogen co-implantation in the SiNPs system derives from the quenching of the third-order nonlinear optical behavior. These findings pointed out a simple approach for engineering the optical bandgap of nanocomposites, which can be controlled by a doping process based on ion-implanted nitrogen. It is highlighted that the enhanced light-matter interactions induced by nitrogen implantation can be useful for developing nonlinear integrated silicon photonics nanodevices with low power excitation.
KW - ion-implanted nanoparticles
KW - nonlinear optics
KW - photoluminescence
KW - quantum dots
KW - third-order nonlinear optical effects
UR - http://www.scopus.com/inward/record.url?scp=85137664275&partnerID=8YFLogxK
U2 - 10.3390/ma15165670
DO - 10.3390/ma15165670
M3 - Artículo
C2 - 36013807
AN - SCOPUS:85137664275
SN - 1996-1944
VL - 15
JO - Materials
JF - Materials
IS - 16
M1 - 5670
ER -