Differences in the laser annealing of a-Si:H and a-SiC films

B. García; M. Estrada; F. Cruz-Gandarilla; M. N.P. Carreño; I. Pereyra

Differences in the laser annealing of a-Si:H and a-SiC films

B. García, M. Estrada, F. Cruz-Gandarilla, M. N.P. Carreño, I. Pereyra

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

8 Citas (Scopus)

Resumen

In this paper we compare differences in particle size, surface roughness, resistivity and X-ray Diffraction pattern observed in a-Si:C and a-Si _0.5 C _0.5 layers crystallized by excimer (KrF) laser annealing (ELA), under similar conditions. The characteristics of the crystallized films are interpreted considering the difference in melting temperature and thermal coefficient of both materials. Looking toward reducing surface roughness, a comparison of poly-Si layer characteristics, when ELA is done directly and through a SiO ₂ layer, is also shown.

Idioma original	Inglés
Páginas (desde-hasta)	164-167
Número de páginas	4
Publicación	Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS
Estado	Publicada - 2004
Evento	5th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS - , República Dominicana Duración: 3 nov. 2004 → 5 nov. 2004

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@article{45aa3fd1d50a47878ae66ff2f725630e,

title = "Differences in the laser annealing of a-Si:H and a-SiC films",

abstract = "In this paper we compare differences in particle size, surface roughness, resistivity and X-ray Diffraction pattern observed in a-Si:C and a-Si 0.5 C 0.5 layers crystallized by excimer (KrF) laser annealing (ELA), under similar conditions. The characteristics of the crystallized films are interpreted considering the difference in melting temperature and thermal coefficient of both materials. Looking toward reducing surface roughness, a comparison of poly-Si layer characteristics, when ELA is done directly and through a SiO 2 layer, is also shown.",

author = "B. Garc{\'i}a and M. Estrada and F. Cruz-Gandarilla and Carre{\~n}o, {M. N.P.} and I. Pereyra",

year = "2004",

language = "Ingl{\'e}s",

pages = "164--167",

journal = "Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS",

issn = "1541-6275",

note = "5th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS ; Conference date: 03-11-2004 Through 05-11-2004",

}

TY - JOUR

T1 - Differences in the laser annealing of a-Si:H and a-SiC films

AU - García, B.

AU - Estrada, M.

AU - Cruz-Gandarilla, F.

AU - Carreño, M. N.P.

AU - Pereyra, I.

PY - 2004

Y1 - 2004

N2 - In this paper we compare differences in particle size, surface roughness, resistivity and X-ray Diffraction pattern observed in a-Si:C and a-Si 0.5 C 0.5 layers crystallized by excimer (KrF) laser annealing (ELA), under similar conditions. The characteristics of the crystallized films are interpreted considering the difference in melting temperature and thermal coefficient of both materials. Looking toward reducing surface roughness, a comparison of poly-Si layer characteristics, when ELA is done directly and through a SiO 2 layer, is also shown.

AB - In this paper we compare differences in particle size, surface roughness, resistivity and X-ray Diffraction pattern observed in a-Si:C and a-Si 0.5 C 0.5 layers crystallized by excimer (KrF) laser annealing (ELA), under similar conditions. The characteristics of the crystallized films are interpreted considering the difference in melting temperature and thermal coefficient of both materials. Looking toward reducing surface roughness, a comparison of poly-Si layer characteristics, when ELA is done directly and through a SiO 2 layer, is also shown.

UR - http://www.scopus.com/inward/record.url?scp=28544435087&partnerID=8YFLogxK

M3 - Artículo de la conferencia

AN - SCOPUS:28544435087

SN - 1541-6275

SP - 164

EP - 167

JO - Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

JF - Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

T2 - 5th IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Y2 - 3 November 2004 through 5 November 2004

ER -

Differences in the laser annealing of a-Si:H and a-SiC films

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