TY - GEN
T1 - Design and fabrication of Schottky diodes in 1.2 μm CMOS process
AU - De La Cruz-Alejo, Jesús
AU - Noé Oliva-Moreno, L.
AU - Santiago Medina-Vázquez, A.
PY - 2010
Y1 - 2010
N2 - The I-V curves for Schottky diodes with two different contact areas and geometries fabricated through 1.2 μm CMOS process are presented. These curves are described applying the analysis and practical layout design. It takes into account the resistance, capacitance and reverse breakdown voltage in the semiconductor structure and the dependence of these parameters to improve its operation. The described diodes are used for a charge pump circuit implementation.
AB - The I-V curves for Schottky diodes with two different contact areas and geometries fabricated through 1.2 μm CMOS process are presented. These curves are described applying the analysis and practical layout design. It takes into account the resistance, capacitance and reverse breakdown voltage in the semiconductor structure and the dependence of these parameters to improve its operation. The described diodes are used for a charge pump circuit implementation.
KW - CMOS process
KW - Layout
KW - Schottky diodes
UR - http://www.scopus.com/inward/record.url?scp=77952516768&partnerID=8YFLogxK
U2 - 10.1109/CONIELECOMP.2010.5440807
DO - 10.1109/CONIELECOMP.2010.5440807
M3 - Contribución a la conferencia
AN - SCOPUS:77952516768
SN - 9781424453535
T3 - CONIELECOMP 2010 - 20th International Conference on Electronics Communications and Computers
SP - 5
EP - 8
BT - CONIELECOMP 2010 - 20th International Conference on Electronics Communications and Computers
T2 - 20th International Conference on Electronics Communications and Computers, CONIELECOMP 2010
Y2 - 22 February 2010 through 24 February 2010
ER -