CuGa_xIn_{1 - x}Se₂ THIN FILMS FOR SOLAR CELLS PREPARED BY FLASH-EVAPORATION.

CuGa//1// minus //xSe//2 thin films were prepared by flash evaporation. The stoichiometry of such films is identical to the starting polycrystalline powder, and the forbidden gaps obtained by optical absorption measurements are identical to that of the single crystals with the same composition. The films exhibit a columnar structure, and they have a crystalline grain dimension of 0. 3 mu m when they are deposited on mica substrates. They are p-type with a resistivity of 1-100 OMEGA cm and a hole mobility of 1-2 cm**2V** minus **1 s** minus **1. The above-characteristics indicate that the flash evaporation is a suitable technique for preparing CuGa//xIn//1// minus //xSe//2 films for heterojunction solar cells.