Crecimiento epitaxial de un pozo cuántico de Al_xGa _1-xAs/GaAs/Al_xGa_1-xAs utilizando vapores metalorgánicos y arsénico sólido como precursores

Ingeniería y ciencia de los materiales

• Semiconductor quantum wells 100%
• Arsenic 94%
• Epitaxial growth 89%
• Vapors 57%
• Metals 41%
• Photoluminescence 25%
• Metallorganic chemical vapor deposition 25%
• Organic chemicals 24%
• Epitaxial films 24%
• Atomic force microscopy 20%
• Chemical vapor deposition 18%
• Spectroscopy 17%
• Substitution reactions 15%
• Impurities 15%
• Ions 14%
• Physical properties 14%
• Hazards 14%
• Semiconductor materials 14%
• Surface roughness 13%
• Oxygen 12%
• Carbon 12%
• Temperature 6%

Química

• Arsine 82%
• Epitaxial Growth 77%
• Elemental Arsenic 28%
• Epitaxial Film 22%
• Secondary Ion Mass Spectroscopy 17%
• Cylinder 17%
• Surface Roughness 16%
• Atomic Force Microscopy 12%
• Photoluminescence 12%
• Semiconductor 12%
• Optical Property 11%
• Substitution Reaction 10%
• Pressure 9%
• Dioxygen 7%
• Carbon Atom 7%
• Surface 5%