Concentration and depth profiles of elements in SixNyHz/Si thin films produced by PECVD

G. Murillo; E. Andrade; J. C. Alonso; L. Acosta; M. F. Rocha; E. P. Zavala; R. Policroniades

doi:10.1016/j.nimb.2006.04.042

Concentration and depth profiles of elements in Si_xN_yH_z/Si thin films produced by PECVD

G. Murillo, E. Andrade, J. C. Alonso, L. Acosta, M. F. Rocha, E. P. Zavala, R. Policroniades

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

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Resumen

Plasma enhanced chemical vapor deposition (PECVD) with SiH₄/NH₃ mixtures was used to produce silicon nitride thin films on silicon substrates. These types of films are commonly used as dielectrics in modern semiconductor technology; however, the incorporation of large amounts of hydrogen affects negatively their stability and electrical properties. Therefore, quantifications of the hydrogen content and chemical composition of these films are required. Forward elastic scattering using a 10 MeV ¹²C³⁺ beam was used to determine the thickness and stoichiometry of the films. Nuclear reaction analysis (NRA) using a 0.825 MeV deuterium beam was also applied to measure the low concentrations of oxygen and carbon in these films. The chemical structure of the silicon nitride layers was studied using infrared spectroscopy.

Idioma original	Inglés
Páginas (desde-hasta)	417-420
Número de páginas	4
Publicación	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volumen	249
N.º	1-2 SPEC. ISS.
DOI	https://doi.org/10.1016/j.nimb.2006.04.042
Estado	Publicada - ago. 2006

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Murillo, G., Andrade, E., Alonso, J. C., Acosta, L., Rocha, M. F., Zavala, E. P., & Policroniades, R. (2006). Concentration and depth profiles of elements in Si_xN_yH_z/Si thin films produced by PECVD. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249(1-2 SPEC. ISS.), 417-420. https://doi.org/10.1016/j.nimb.2006.04.042

@article{3626be6fe5ca45f99f3a4d919ce773cc,

title = "Concentration and depth profiles of elements in SixNyHz/Si thin films produced by PECVD",

abstract = "Plasma enhanced chemical vapor deposition (PECVD) with SiH4/NH3 mixtures was used to produce silicon nitride thin films on silicon substrates. These types of films are commonly used as dielectrics in modern semiconductor technology; however, the incorporation of large amounts of hydrogen affects negatively their stability and electrical properties. Therefore, quantifications of the hydrogen content and chemical composition of these films are required. Forward elastic scattering using a 10 MeV 12C3+ beam was used to determine the thickness and stoichiometry of the films. Nuclear reaction analysis (NRA) using a 0.825 MeV deuterium beam was also applied to measure the low concentrations of oxygen and carbon in these films. The chemical structure of the silicon nitride layers was studied using infrared spectroscopy.",

keywords = "Elastic forward scattering, Elastic recoil detection analysis, IBA techniques, Rutherford backscattering",

author = "G. Murillo and E. Andrade and Alonso, {J. C.} and L. Acosta and Rocha, {M. F.} and Zavala, {E. P.} and R. Policroniades",

year = "2006",

month = aug,

doi = "10.1016/j.nimb.2006.04.042",

language = "Ingl{\'e}s",

volume = "249",

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journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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Murillo, G, Andrade, E, Alonso, JC, Acosta, L, Rocha, MF, Zavala, EP & Policroniades, R 2006, 'Concentration and depth profiles of elements in Si_xN_yH_z/Si thin films produced by PECVD', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 249, n.º 1-2 SPEC. ISS., pp. 417-420. https://doi.org/10.1016/j.nimb.2006.04.042

Concentration and depth profiles of elements in Si_xN_yH_z/Si thin films produced by PECVD. / Murillo, G.; Andrade, E.; Alonso, J. C. et al.
En: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, N.º 1-2 SPEC. ISS., 08.2006, p. 417-420.

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

TY - JOUR

T1 - Concentration and depth profiles of elements in SixNyHz/Si thin films produced by PECVD

AU - Murillo, G.

AU - Andrade, E.

AU - Alonso, J. C.

AU - Acosta, L.

AU - Rocha, M. F.

AU - Zavala, E. P.

AU - Policroniades, R.

PY - 2006/8

Y1 - 2006/8

N2 - Plasma enhanced chemical vapor deposition (PECVD) with SiH4/NH3 mixtures was used to produce silicon nitride thin films on silicon substrates. These types of films are commonly used as dielectrics in modern semiconductor technology; however, the incorporation of large amounts of hydrogen affects negatively their stability and electrical properties. Therefore, quantifications of the hydrogen content and chemical composition of these films are required. Forward elastic scattering using a 10 MeV 12C3+ beam was used to determine the thickness and stoichiometry of the films. Nuclear reaction analysis (NRA) using a 0.825 MeV deuterium beam was also applied to measure the low concentrations of oxygen and carbon in these films. The chemical structure of the silicon nitride layers was studied using infrared spectroscopy.

AB - Plasma enhanced chemical vapor deposition (PECVD) with SiH4/NH3 mixtures was used to produce silicon nitride thin films on silicon substrates. These types of films are commonly used as dielectrics in modern semiconductor technology; however, the incorporation of large amounts of hydrogen affects negatively their stability and electrical properties. Therefore, quantifications of the hydrogen content and chemical composition of these films are required. Forward elastic scattering using a 10 MeV 12C3+ beam was used to determine the thickness and stoichiometry of the films. Nuclear reaction analysis (NRA) using a 0.825 MeV deuterium beam was also applied to measure the low concentrations of oxygen and carbon in these films. The chemical structure of the silicon nitride layers was studied using infrared spectroscopy.

KW - Elastic forward scattering

KW - Elastic recoil detection analysis

KW - IBA techniques

KW - Rutherford backscattering

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DO - 10.1016/j.nimb.2006.04.042

M3 - Artículo

SN - 0168-583X

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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