TY - GEN
T1 - Comprehensive review on high-frequency CNT-based interconnects
AU - Pacheco-Sanchez, Anibal
AU - Larruz-Castillo, Irving
AU - Sangani, Dishant
AU - Valdez-Perez, Donato
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/11
Y1 - 2019/11
N2 - This review focuses on the recent advances of metallic carbon nanotubes (m-CNTs) towards their implementation as interconnects in high-frequency (HF) applications. S-parameters of fabricated passive devices using m-CNTs are summarized and discussed as well as the device characteristics. In addition, compact and analytical models of CNT-based interconnects are reviewed in detail and model improvements are proposed.
AB - This review focuses on the recent advances of metallic carbon nanotubes (m-CNTs) towards their implementation as interconnects in high-frequency (HF) applications. S-parameters of fabricated passive devices using m-CNTs are summarized and discussed as well as the device characteristics. In addition, compact and analytical models of CNT-based interconnects are reviewed in detail and model improvements are proposed.
KW - CNT interconnects
KW - characterization
KW - high-frequency
KW - modeling
UR - http://www.scopus.com/inward/record.url?scp=85084631584&partnerID=8YFLogxK
U2 - 10.1109/iCASAT48251.2019.9069515
DO - 10.1109/iCASAT48251.2019.9069515
M3 - Contribución a la conferencia
AN - SCOPUS:85084631584
T3 - 2019 IEEE International Conference on Applied Science and Advanced Technology, iCASAT 2019
BT - 2019 IEEE International Conference on Applied Science and Advanced Technology, iCASAT 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International Conference on Applied Science and Advanced Technology, iCASAT 2019
Y2 - 27 November 2019 through 28 November 2019
ER -