TY - JOUR
T1 - Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon
AU - Torchynska, T. V.
AU - Palacios Gomez, J.
AU - Polupan, G. P.
AU - Becerril Espinoza, F. G.
AU - Garcia Borquez, A.
AU - Korsunskaya, N. E.
AU - Khomenkova, L. Yu
N1 - Funding Information:
This work was partially supported by Ministry of Sciences and Technology of Ukraine and CONACYT Mexico.
PY - 2000/10/23
Y1 - 2000/10/23
N2 - Photoluminescence and photoluminescence excitation spectroscopies, scanning electron microscopy, and atomic force microscopy were used to study the photoluminescence mechanism in porous silicon. The dependences of photoluminescence parameters on electrochemical etching regimes, excitation light wavelength, and vacuum ageing have been investigated. We show that intensive and broad `red' luminescence band (approximately 600-800 nm) is non-elementary, and can be decomposed into three elementary bands. The mechanisms of the elementary bands are discussed.
AB - Photoluminescence and photoluminescence excitation spectroscopies, scanning electron microscopy, and atomic force microscopy were used to study the photoluminescence mechanism in porous silicon. The dependences of photoluminescence parameters on electrochemical etching regimes, excitation light wavelength, and vacuum ageing have been investigated. We show that intensive and broad `red' luminescence band (approximately 600-800 nm) is non-elementary, and can be decomposed into three elementary bands. The mechanisms of the elementary bands are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0034300805&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(00)00529-8
DO - 10.1016/S0169-4332(00)00529-8
M3 - Artículo
SN - 0169-4332
VL - 167
SP - 197
EP - 204
JO - Applied Surface Science
JF - Applied Surface Science
IS - 3
ER -