Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al_0.30Ga_0.70As structures with different capping/buffer quantum wells at annealing

Ingeniería y ciencia de los materiales

• Semiconductor quantum wells 100%
• Annealing 63%
• Epitaxial growth 44%
• Chemical analysis 41%
• Argon 36%
• X ray diffraction 31%
• Temperature 25%
• Computer simulation 17%

Física y astronomía

• buffers 54%
• quantum dots 49%
• quantum wells 49%
• annealing 38%
• epitaxy 7%
• argon 6%
• computer programs 5%
• atmospheres 5%
• high resolution 4%
• temperature 4%
• diffraction 4%
• x rays 3%
• simulation 3%

Química

• Quantum Dot 56%
• Annealing 50%
• Buffer Solution 41%
• Epitaxial Growth 9%
• Emission Peak 8%
• Simulation 5%
• X-Ray Diffraction 3%
• Application 2%