TY - JOUR
T1 - Comparative secondary ion mass spectroscopy analysis of solar cell structures grown by pulsed laser ablation and ion sputtering
AU - Godines, J. A.
AU - Villegas, A.
AU - Kudriavtsev, Yu
AU - Asomoza, R.
AU - Morales-Acevedo, A.
AU - Escamilla, A.
AU - Arriaga, G.
AU - Hernández-Contreras, H.
AU - Contreras-Puente, G.
AU - Vidal, J.
AU - Chavarría, M.
AU - Fragoso-Soriano, R.
PY - 2004/2
Y1 - 2004/2
N2 - We performed a complex secondary ion mass spectroscopy (SIMS) 3D analysis of solar cell structures based on II-VI semiconductors. The chemical composition analysis, as well as the depth distribution of the main elements and contamination were done for AuCu/CdTe/CdS/conducting glass structures. A structure where the II-VI compounds were grown by pulsed laser ablation (PLA) was compared with another structure grown by ion sputtering deposition (ISD). In both cases contamination due to O, C and H was found at high concentrations, particularly at the boundaries between crystallites. In addition to the SIMS depth profiling, the surface roughness (SR) was analysed by atomic force microscopy (AFM). Poor SIMS depth resolution was correlated to high surface roughness. The root-mean-square of the surface roughness (Rrms) was found to be higher for ISD than for PLA structures. In addition, the lateral distribution of the main components and contamination were observed in the microscope mode with a resolution of about 1μm. A larger lateral contamination was correlated to a larger Rrms of the analysed surface. Experimental 'diffusion' tails of Cu and Au from the ohmic contacts on the CdTe layer are also explained by a high Rrms for this layer.
AB - We performed a complex secondary ion mass spectroscopy (SIMS) 3D analysis of solar cell structures based on II-VI semiconductors. The chemical composition analysis, as well as the depth distribution of the main elements and contamination were done for AuCu/CdTe/CdS/conducting glass structures. A structure where the II-VI compounds were grown by pulsed laser ablation (PLA) was compared with another structure grown by ion sputtering deposition (ISD). In both cases contamination due to O, C and H was found at high concentrations, particularly at the boundaries between crystallites. In addition to the SIMS depth profiling, the surface roughness (SR) was analysed by atomic force microscopy (AFM). Poor SIMS depth resolution was correlated to high surface roughness. The root-mean-square of the surface roughness (Rrms) was found to be higher for ISD than for PLA structures. In addition, the lateral distribution of the main components and contamination were observed in the microscope mode with a resolution of about 1μm. A larger lateral contamination was correlated to a larger Rrms of the analysed surface. Experimental 'diffusion' tails of Cu and Au from the ohmic contacts on the CdTe layer are also explained by a high Rrms for this layer.
UR - http://www.scopus.com/inward/record.url?scp=10744224373&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/19/2/015
DO - 10.1088/0268-1242/19/2/015
M3 - Artículo
SN - 0268-1242
VL - 19
SP - 213
EP - 218
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 2
ER -