Comparative investigations of surface structure, photoluminescence and its excitation in silicon wires

G. P. Polupan, T. V. Torchynska, J. Palacios Gomez, H. A. Flores Gonzalez, F. G. Bacarril Espinoza, A. Ita Torre, B. M. Bulakh, L. V. Scherbina

Producción científica: Contribución a una revistaArtículo de la conferenciarevisión exhaustiva

9 Citas (Scopus)

Resumen

The dependence of the photoluminescence (PL) and PL excitation spectra on the porous silicon top surface structure and the oxide composition on it has been investigated. Researches were carried out using the following methods: PL, PL excitation, electron paramagnetic resonance, atomic force microscope and X-ray photoelectron emission spectroscopy. Results indicate a direct correlation between the suboxide content and roughness structure on the surface with PL intensity. No correlation was noted between the PL intensity and the concentration of Si dangling bonds (non-radiative recombination centers). These results have given further support to a suboxide-related color center on the Si/SiOx interface as the source of the intense red luminescence of silicon wires.

Idioma originalInglés
Páginas (desde-hasta)235-241
Número de páginas7
PublicaciónJournal of Electron Spectroscopy and Related Phenomena
Volumen114-116
DOI
EstadoPublicada - mar. 2001
Evento8th International Conference on Electronic Spectroscopy and Structure (ICESS-8) - Berkeley, CA, USA
Duración: 8 ago. 200012 ago. 2000

Huella

Profundice en los temas de investigación de 'Comparative investigations of surface structure, photoluminescence and its excitation in silicon wires'. En conjunto forman una huella única.

Citar esto